The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation

机译：碳对Si（100）表面形貌及其后续Ge岛形成的影响

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The surface structure of Si(100) after carbon deposition has been studied by scanning tunnelling microscopy (STM) at a substrate temperature of 600 deg C. At carbon coverages of about 1/3 monolayer (ML) a c(4X4) structure covering the entire surface is obtained. Higher coverages give rise to island formation and to a 2X1 structure of the surrounding substrate surface. The surface morphology after subsequent Si epitaxy is documented and depends on the initial carbon concentration. The c(4X4) structure (without islands) can be observed even after additional 3-nm thick epitaxial Si is deposited. The island formation of Ge on si(100) at 550 deg C - after carbon (0.1-0.3 ML) predeposition - leads to smaller islands of about 5 nm in size than without carbon. The islands are arranged on a 2Xn structure with missing dimers and missing dimer rows and the island density is about 1-3.6X10~(11) cm~(-2) (0.3 ML C predeposition). Subsequent Si deposition reveals, that the strain field around the islands slows down the growth rate in the island neighbourhood.

机译：碳沉积后Si（100）的表面结构已通过扫描隧道显微镜（STM）在600摄氏度的衬底温度下进行了研究。在碳覆盖率约1/3的单层（ML）ac（4X4）结构覆盖了整个表面获得表面。较高的覆盖率会导致岛的形成以及周围基板表面的2X1结构。记录了随后的Si外延之后的表面形态，并取决于初始碳浓度。即使沉积了额外的3 nm厚的外延Si，也可以观察到c（4X4）结构（无岛）。预先在碳（0.1-0.3 ML）沉积后，在550℃下于si（100）上形成Ge的岛，形成的岛比没有碳的岛小，约5 nm。这些岛排列成2Xn结构，缺少二聚体和二聚体排缺失，岛密度约为1-3.6X10〜（11）cm〜（-2）（0.3 ML C预先沉积）。随后的硅沉积表明，岛周围的应变场减慢了岛附近地区的增长率。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.69-72|共4页
会议地点 Strasbourg(FR)
作者
R. Butz; H. Luth;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
Surface morphology; Silicon; Germanium; Epitaxy; Scanning tunnelling microscopy;

机译：表面形态硅;锗;外延;扫描隧道显微镜;

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4. The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation [C] . R. Butz, H. Luth E-MRS conference on thin films epitaxial growth and nanostructures . 1998

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The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation

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