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Tunnelling currents in very narrow P~+-n~+ junctions

机译：在非常狭窄的P〜+ -n〜+结中的隧道电流

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摘要

Epitaxially grown p~+-i-n~+ junctions were processed to diodes by mesa etching and contacted by Cr/Au metallization. Rim currents, which often plague mesa devices were reduced by a special design with the contact area separated from the mesa rim. The dependence on the current voltage characteristics on contact area, on temperature and on external load was investigated. Four different regimes were identified where Zener tunnelling, Esaki tunnelling, tunnelling through midgap states and diffusion of minority carriers dominate the current, respectively. Esaki tunnelling leads to negative differential resistance which causes oscillations depending on the external load. The results are interpreted by considering the nominal intrinsic width, the extension of the depletion layer and the abruptness of the doping transition.
机译：通过台面蚀刻将外延生长的p〜+ -i-n〜+结处理为二极管，并通过Cr / Au金属化进行接触。通过将接触区域与台面边缘分开的特殊设计，减少了经常困扰台面设备的轮辋电流。研究了电流电压特性对接触面积，温度和外部负载的依赖性。确定了四种不同的机制，其中齐纳隧穿，江崎隧穿，通过中间能隙隧穿和少数载流子的扩散分别占主导地位。 Esaki隧穿会导致负差分电阻，该负差分电阻会导致振荡，具体取决于外部负载。通过考虑标称固有宽度，耗尽层的扩展和掺杂跃迁的突变来解释结果。

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