Electrical properties of HgCdTe films obtained by laser deposition

机译：通过激光沉积获得的HgCdTe薄膜的电学性质

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HgCdTe thin films have been obtained on the Al_2O_3 surface by the pulse laser deposition method in dynamic vacuum. Films grown at the temperature window of 470-490 K exhibit relatively small electrical resistance. The resistance-temperature characteristics of the films are compared to those of the target and they clearly point to intrinsic and impurity regions. The temperature dependency of the Hall coefficient, the stationary and kinetic photoconductivity of the layers as well as the life time of charge carriers have been studied.

机译：在动态真空条件下，通过脉冲激光沉积法在Al_2O_3表面获得了HgCdTe薄膜。在470-490 K温度范围内生长的薄膜显示出相对较小的电阻。将薄膜的电阻-温度特性与靶材的电阻-温度特性进行比较，它们清楚地指出了本征区和杂质区。研究了霍尔系数的温度依赖性，层的静态和动态光电导性以及电荷载流子的寿命。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.188-190|共3页
会议地点 Strasbourg(FR)
作者
G. Wisz; I. Virt; M. Kuzma;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
HgCdTe films; Pulse laser deposition; Photoconductivity; Hall coefficient;

机译：HgCdTe薄膜；脉冲激光沉积光电导性霍尔系数;

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4. Electrical properties of HgCdTe films obtained by laser deposition [C] . G. Wisz, I. Virt, M. Kuzma E-MRS conference on thin films epitaxial growth and nanostructures . 1998

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Electrical properties of HgCdTe films obtained by laser deposition

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