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首页> 外文会议>Thin films epitaxial growth and nanostructures >Photoluminescence studies of As-P exchange in GaAs/GaInP_2 quantum wells grown by chemical beam epitaxy
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Photoluminescence studies of As-P exchange in GaAs/GaInP_2 quantum wells grown by chemical beam epitaxy

机译：化学束外延生长GaAs / GaInP_2量子阱中As-P交换的光致发光研究

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Group V element exchange during the growth of GaAs/Ga_(0.51)In_(0.49)P quantum wells (QWs) by chemical beam epitaxy is investigated by photoluminescence (PL) experiments as a function of temperature from 4 to 300 K. In order to study the As-P exchange at the direct interface of the GaAs QW, the GaInP_2 surface is exposed to a cracked AsH_3 flow during various times. The QW free excition energy is deduced at 4 K by fitting the temperature dependence of the PL energy with the classical expression E(T) = E_o-a[1+2/{exp(#theta#/T)-1}]. The calculation of the E_1HH_1 energies are carried out by taking into account the following phenomena which affect the QW structure: indium segregation, As-P exchange and As and P residual incorporations. It is found that As-P exchange rate decreases with the increase of the cracked AsH_3 exposure time.
机译：通过光致发光（PL）实验研究了通过化学束外延生长的GaAs / Ga_（0.51）In_（0.49）P量子阱（QWs）中V组元素交换随温度从4到300 K的变化。在GaAs QW的直接界面上研究As-P交换时，GaInP_2表面在不同时间暴露于破裂的AsH_3流。通过用经典表达式E（T）= E_o-a [1 + 2 / {exp（＃theta＃/ T）-1}]拟合PL能量的温度依赖性，可以在4 K上推导出QW自由激发能。 E_1HH_1能量的计算是通过考虑影响QW结构的以下现象进行的：铟偏析，As-P交换以及As和P残留结合。发现随着裂解的AsH_3暴露时间的增加，As-P交换速率降低。

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