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首页> 外文会议>Thin films epitaxial growth and nanostructures >Influence of grown-in defects on the optical and electrical properties of Si/Si_(1-x)Ge_x/Si heterostructures
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Influence of grown-in defects on the optical and electrical properties of Si/Si_(1-x)Ge_x/Si heterostructures

机译：缺陷的生长对Si / Si_（1-x）Ge_x / Si异质结构的光学和电学性质的影响

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The optical, electrical, and structural quality of epitaxial Si/Si_(1-x)Ge_x/Si layers has been studied as a function of growth temperature and layer deposition sequence. The epitaxial layers were grown by reduced pressure chemical vapor deposition in an ASM Epsilon-One reactor developed for production applications. The high material quality of both undoped and p-type modulation-doped Si/Si_(1-x)Ge_x/Si heterostructures which were grown without a growth interruption of more than 30 s is indicated by sharp and intense Si_(1-x)Ge_xphotoluminescence with a FWHM of 6-10 meV for the no-phonon lines. Long growth interruptions, e.g. to change growth temperatruure between layer deposition, resulted in a reduced luminescence. However, this recovers after annealing the samples in a H_2-plasma at 400 deg C for 30 min, which indicates that non-radiative recombination centers are grown-in during epitaxial growth. The electrical quality of epitaxial Si/Si_(1-x)Ge_x layers has been characterized by measuring the hole mobility of modulation doped samples at 4 K. Very high hole mobilities up to 8616 cm~2/Vs at hole densities of 6.5X10~(11) cm~(-2) were measured. The hole mobility did not depend on epitaxial growth temperature down to 625 deg C. Further, the growth sequence and subsequent thermal treatments after the growth did not have any negative influence on the high electrical quality of the epitaxial films.
机译：研究了外延Si / Si_（1-x）Ge_x / Si层的光学，电学和结构质量与生长温度和层沉积顺序的关系。通过在为生产应用开发的ASM Epsilon-One反应器中减压化学气相沉积来生长外延层。尖锐而强烈的Si_（1-x）表示出无掺杂和p型调制掺杂的Si / Si_（1-x）Ge_x / Si异质结构的高材料质量，这些异质结构的生长没有超过30 s的生长中断非声子线的FWHM为6-10 meV的Ge_x光致发光。长期的增长中断，例如改变层沉积之间的生长温度，导致发光减少。但是，在将样品在H_2-等离子体中在400摄氏度下退火30分钟后，这种情况会恢复，这表明在外延生长过程中会生长出非辐射重组中心。外延Si / Si_（1-x）Ge_x层的电学性质已通过测量调制掺杂样品在4 K下的空穴迁移率来表征。在6.5X10〜的空穴密度下，非常高的空穴迁移率高达8616 cm〜2 / Vs测量（11）cm〜（-2）。空穴迁移率不依赖于低至625℃的外延生长温度。此外，生长顺序和生长后的后续热处理对外延膜的高电学品质没有任何负面影响。

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