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Grown-in defect formation simulation method and a silicon single crystal manufacturing method based on the simulation method
Grown-in defect formation simulation method and a silicon single crystal manufacturing method based on the simulation method
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机译：生长缺陷形成模拟方法和基于该方法的硅单晶制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of simulating formation of Grown-in defects which can simulate formation of Grown-in defects being different depending on the oxygen concentration in a silicon single crystal and determine growth conditions so as to obtain a silicon single crystal with a desired defect size and a desired density.SOLUTION: A method of simulating formation of Grown-in defects formed during growing a silicon single crystal is characterized by calculating the completion time of formation of Void defects, one of the Grown-in defects, as the time of reaching the temperature at which the oxygen concentration in the silicone single crystal is oversaturated or the time after elapse of a specified time from the time of reaching the temperature at which the oxygen concentration in the silicon single crystal is oversaturated.
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