Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures

机译：MOCVD生长的ZnCdSe GRINSCH结构中光放大过程的确定

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In this paper we present measurements of light amplification in optically pumped ZnCdSe graded refraction index separate confinement heterostructures (GRINSCH). In several differently designed samples we observe the presence of two gain mechanisms, which involve localized excitons and exciton-exciton inelastic scattering processes, respectively. The influence of the GRINSCH structure on gain is discussed with respect to light guiding variations due to sample design. A numerical simulation is used to investigate the phenomenon of gain quenching with decreasing barrier width.

机译：在本文中，我们介绍了在光泵浦ZnCdSe渐变折射率分离限制异质结构（GRINSCH）中进行光放大的测量。在几个不同设计的样本中，我们观察到两种增益机制的存在，分别涉及局部激子和激子-激子非弹性散射过程。关于GRINSCH结构对增益的影响，讨论了由于样品设计导致的光导变化。数值模拟用于研究随着势垒宽度减小的增益猝灭现象。

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《Thin films epitaxial growth and nanostructures》|1998年|p.326-331|共6页
会议地点 Strasbourg(FR)
作者
I. Mikulskas; D. Brinkmann; K. Luterova; R. Tomasiunas; B. Honerlage; J.V. Vaitkus; R.L. Aulombard; T. Cloitre;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
GRINSCH structures; ZnCdSe;

机译：GRINSCH结构；硒化锌;

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1. Blue-green ZnCdSe light-emitting diodes grown by MOCVD [J] . Toda A., Kawasumi T. Electronics Letters . 1995,第3期

机译：MOCVD生长的蓝绿色ZnCdSe发光二极管
2. Determination of the indices of refraction of molecular-beam-epitaxy-grown ZnSe/ZnCdSe multiple-quantum-Well structures [J] . F.C.Peiris, U.Bindley, J.K.Furdyna Journal of Vacuum Science & Technology. B . 2001,第4期

机译：分子束外延生长的ZnSe / ZnCdSe多量子阱结构的折射率测定
3. Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates [J] . M.C. Tamargo, W. Lin, S.P. Guo, Journal of Crystal Growth . 2000,第期

机译：在InP衬底上生长的ZnCdMgSe / ZnCdSe量子阱结构的全色发光二极管
4. Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures [C] . I. Mikulskas, D. Brinkmann, K. Luterova, E-MRS conference on thin films epitaxial growth and nanostructures . 1998

机译：MOCVD种植Zncdse Grinsch结构中光放大过程的测定
5. III-Nitride semiconductor films and device structures grown by low-pressure MOCVD. [D] . Kung, Patrick. 2000

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6. Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD [O] . A. Lesage, D. Timmerman, T. Inaba, -1

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机译：电子和质子辐射对MBE和MoCVD中的带结构和载波动力学的影响，生长III-V试验结构

Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures

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