Dislocation pattern formation in epitaxial structures based on SiGe alloys

机译：SiGe合金在外延结构中位错图案的形成

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Single layer SiGe/Si and Si/SiGe heterostructures were grown by the molecular beam epitaxy technique with Si solid and GeH_4 gas sources. Dependence of dislocation distribution in heterostructures along the growth direction on alloy composition and layer thickness was studied using transmission electron microscopy and chemical etching/Nomarski microscopy. It has been found that misfit dislocation network evolves from flat regular to dense three-dimensional during the epitaxial growth. This process is strongly affected by alloy composition and accompanied by complex changing in dislocation density in both the layer and substrate. The phenomenon is interpreted qualitatively in terms of Ge-rich microsegregation effect on dislocation generation, propagation propagation and multiplication.

机译：利用Si固体和GeH_4气源，通过分子束外延技术生长了单层SiGe / Si和Si / SiGe异质结构。利用透射电子显微镜和化学蚀刻/诺马斯基显微镜研究了异质结构沿生长方向的位错分布对合金成分和层厚的影响。已经发现，在外延生长期间，失配位错网络从平坦的规则形演化为密集的三维形。该过程受合金成分的强烈影响，并伴随着层和基底中位错密度的复杂变化。从富含锗的微偏析对位错产生，传播传播和繁殖的影响定性地解释了该现象。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.112-115|共4页
会议地点 Strasbourg(FR)
作者
T.G. Yugova; V.I. Vdovin; M.G. Milvidskii; L.K. Orlov; V.A. Tolomasov; A.V. Potapov; N.V. Abrosimov;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
Films; SiGe alloys; Misfit dislocations; Generation mechanisms;

机译：电影； SiGe合金；错位错位；产生机制;

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专利

1. Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates [J] . Vdovin VI, Milvidskii MG, Yugova TG Crystallography reports . 2005,第5期

机译：失配应变的符号对在Si和Ge衬底上生长的SiGe外延层中位错结构形成的影响
2. Using a continuous flow reactor for aqueous lateral epitaxial overgrowth of low-dislocation-density ZnO layers on honeycomb-patterned structures [J] . Chen Hou-Guang, Wang Huei-Sen, Yang Shu-Han, CrystEngComm . 2020,第3期

机译：在蜂窝图案结构上使用连续流动反应器用于低位锁定密度ZnO层的水横向外延过度生长
3. Misfit dislocation free epitaxial growth of SiGe on compliant nanostructured silicon [J] . Peter Zaumseil, Markus Andreas Schubert, Yuji Yamamoto, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：SiGe在顺应性纳米结构硅上的无错位无外延生长
4. Dislocation pattern formation in epitaxial structures based on SiGe alloys [C] . T. G. Yugova, V. I. Vdovin, M. G. Milvidskii, E-MRS conference on thin films epitaxial growth and nanostructures . 1998

机译：基于SiGe合金的外延结构中的位错模式形成
5. Simulating Irradiation-Induced Dislocation Loops in Zirconium Alloys: Understanding Their Structure, Formation and Effect on X-ray Diffraction Line Profiles [D] . Hulse, Rory. 2019

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6. A Dislocation-Scale Characterization of the Evolution of Deformation Microstructures around Nanoindentation Imprints in a TiAl Alloy [O] . Antoine Guitton, Hana Kriaa, Emmanuel Bouzy, 2018

机译：TiAl合金中纳米压痕印记周围变形微观结构演变的位错尺度表征
7. Probing the Structure and Energetics of Dislocation Cores in SiGe Alloys through Monte Carlo Simulations [O] . Remediakis, Ioannis N., Jesson, David E., Kelires, Pantelis C. 2006

机译：siGe合金中位错核的结构和能量学探讨通过蒙特卡罗模拟

Dislocation pattern formation in epitaxial structures based on SiGe alloys

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