Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

机译：GaSb /（001）GaAs岛和台阶中位错半环的形成：蒙特卡罗模拟

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We have simulated the growth of GaSb/(001)GaAs, and we have focused our study on the defects creation at the D_A and D_B double steps on the substrate. A Monte Carlo scheme associated with a valence force field approximation is used to describe, respectively, the kinetic and the strain effects in the mis-matched film. These simulations indicate a strong localization of dislocation half loops at the step edges in accordance with experimental observations.

机译：我们已经模拟了GaSb /（001）GaAs的生长，并且我们将研究重点放在了基板D_A和D_B双台阶处的缺陷产生上。与价场近似相关的蒙特卡洛方案分别用于描述失配膜中的动力学和应变效应。这些模拟表明，根据实验观察，位错半环在台阶边缘处的强烈定位。

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来源
《Thin films epitaxial growth and nanostructures》|1998年|p.277-280|共4页
会议地点 Strasbourg(FR)
作者
J. Dalla Torre; M. Djafari Rouhani; G. Landa; A.M. Rocher; R. Malek; D. Esteve;
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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
关键词
Heteroepitaxy; Modeling; Dislocations; Steps; GaSb/GaAs interface;

机译：异外延；造型;脱位；脚步; GaSb / GaAs接口;

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5. Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation [C] . J. Dalla Torre, M. Djafari Rouhani, G. Landa, E-MRS conference on thin films epitaxial growth and nanostructures . 1998

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Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

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