ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM

机译：CMOS SRAM中的局部和全局瞬态效应分析

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We have studied the sensitivity of a 256 kbit CMOS/epi SRAM to transient phenomena (protons and ions SEU, dose rate). Local and global failure mechanisms are observed and discussed. For single particles, or at low dose rate, cell upsets are uncorrelated. When the dose rate is increased, correlated failures are due to both cell photocurrent summation (rail span collapse) and supply voltage drop in pheripheral circuits. The transition between uncorrelated to correlated failures is interpreted, on the basis of device structure and pattern influence.

机译：我们已经研究了256 kbit CMOS / epi SRAM对瞬态现象（质子和离子SEU，剂量率）的敏感性。观察和讨论了局部和全局故障机制。对于单个颗粒或低剂量率，细胞不适是不相关的。当剂量率增加时，相关的故障是由于电池光电流求和（轨道跨度崩溃）和外围电路中的电源电压降引起的。基于设备结构和模式影响，解释了不相关故障与相关故障之间的过渡。

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《Third European conference on radiation and its effects on components and systems》|1995年|346-353|共8页
会议地点 Arcachon(FR);Arcachon(FR)
作者
F.Gardic; O.Musseau; O.Flament; C.Brisset; V. Ferlet-Cavrois; M.Martinez; T.Corbière;
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CEA, Centre d'études de Bruyères le Châtel, BP 12, 91680 Bruyères le Châtel, France;

CEA, Centre d'études de Bruyères le Châtel, BP 12, 91680 Bruyères le Châtel, France;

CEA, Centre d'études de Bruyères le Châtel, BP 12, 91680 Bruyères le Châtel, France;

CEA, Centre d'études de Bruyères le Châtel, BP 12, 91680 Bruyères le Châtel, France;

CEA, Centre d'études de Bruyères le Châtel, BP 12, 91680 Bruyères le Châtel, France;

CEA, Centre d'études de Bruyères le Châtel, BP 12, 91680 Bruyères le Châtel, France;

MATRA MHS, La Chantrerie, route de Gachet, CP 3008, 44087 Nantes cedex 03, France;

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1. Analysis of local and global transient effects in a CMOS SRAM [J] . Gardic F., Musseau O. IEEE Transactions on Nuclear Science . 1996,第3期

机译：分析CMOS SRAM中的局部和全局瞬态效应
2. Analysis of single event effects at grazing angle [CMOS SRAMs] [J] . Campbell A.B., Musseau O. IEEE Transactions on Nuclear Science . 1998,第3期

机译：掠射角下的单事件影响分析[CMOS SRAM]
3. Effects of process parameter distributions and ion strike locations on SEU cross-section data (CMOS SRAMs) [J] . Massengill L.W., Alles M.L. IEEE Transactions on Nuclear Science . 1993,第6期

机译：工艺参数分布和离子撞击位置对SEU横截面数据（CMOS SRAM）的影响
4. Analysis of local and global transient effects in a CMOS SRAM [C] . Gardic, F., Musseau, . 1996

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ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM

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