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Surface Characterization of Ga-doped ZnO layers

机译：Ga掺杂ZnO层的表面表征

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摘要

Epitaxial ZnO layers heavily doped with Ga (GZO) were grown at 400 ℃ under metal-and oxygen-rich conditions in terms of metal-to-reactive oxygen ratio by plasma-assisted molecular beam epitaxy (MBE). Several atomic force microscopy (AFM) techniques were used to characterize the surface morphology and electrical properties of these GZO films in ambient conditions. Local 1-V spectra indicate that layers grown under both O-rich and metal-rich conditions are highly resistive until a relatively high voltage sweep (±12 V) is used. After removal of an insulating surface layer, conduction is possible at lower voltages, but eventually the film resistivity increases and it again becomes insulating. In addition to local 1-V spectra, local charge injection and subsequent surface potential measurements were used to probe surface charging characteristics. For charge injection experiments, a reverse-bias voltage is applied to the sample while scanning in contact mode with a metallized tip. The resultant change in surface potential due to trapped charge is subsequently observed using scanning Kelvin probe microscopy (SKPM). The layers deposited in a metal-rich environment demonstrate the expected behavior, but the O-rich layers show anomalous negative and positive charging. Finally, surface photovoltage (SPV) measurements using above-bandgap UV illumination were performed. The GZO layers produce SPV values of 0.4 to 0.5 eV, where the films deposited in an O-rich environment have slightly higher SPV values and faster restoration.
机译：通过等离子辅助分子束外延（MBE），在金属和氧的富集条件下，在富含金属和氧的条件下，在400℃下生长了重掺杂Ga（GZO）的外延ZnO层。几种原子力显微镜（AFM）技术用于表征这些GZO膜在环境条件下的表面形态和电性能。局部1-V光谱表明，在使用富含O和金属的条件下生长的层具有高电阻性，直到使用相对较高的电压扫描（±12 V）为止。在去除绝缘表面层之后，可以在较低的电压下导电，但是最终膜电阻率增加并且再次变为绝缘。除了局部1-V谱外，还使用局部电荷注入和随后的表面电势测量来探测表面充电特性。对于电荷注入实验，在与金属化尖端以接触模式进行扫描时，向样品施加反向偏置电压。随后使用扫描开尔文探针显微镜（SKPM）观察到由于捕获的电荷导致的表面电势变化。在富含金属的环境中沉积的层表现出预期的行为，但是富含O的层显示出异常的负电荷和正电荷。最后，使用带隙以上的紫外线照射进行了表面光电压（SPV）测量。 GZO层产生的SPV值为0.4到0.5 eV，在富含O的环境中沉积的薄膜具有更高的SPV值和更快的恢复速度。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    J.D. McNamara; J.D. Ferguson; M Foussekis; I. Ruchala; M.A. Reshchikov; A.A. Baski; H. Liu; V. Avrutin; H. Morkoc;

  • 作者单位

    Department of Physics, Virginia Commonwealth University, Richmond, VA 23284;

    Department of Physics, Virginia Commonwealth University, Richmond, VA 23284;

    Department of Physics, Virginia Commonwealth University, Richmond, VA 23284;

    Department of Physics, Virginia Commonwealth University, Richmond, VA 23284;

    Department of Physics, Virginia Commonwealth University, Richmond, VA 23284;

    Department of Physics, Virginia Commonwealth University, Richmond, VA 23284;

    Department of Electrical and Computer Engineering, VCU, Richmond, VA 23284;

    Department of Electrical and Computer Engineering, VCU, Richmond, VA 23284;

    Department of Electrical and Computer Engineering, VCU, Richmond, VA 23284;

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