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首页> 外文会议>Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition >Dynamic optical turn-off control of a high-voltage SiC MOSFET
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Dynamic optical turn-off control of a high-voltage SiC MOSFET

机译：高压SiC MOSFET的动态光关断控制

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This paper presents a novel self-contained optical turn-off control method for high-voltage SiC MOSFETs, used in the next generation high-power and high-frequency power-electronics applications. Turn-off control decreases the turn-off voltage overshoot and ringing caused by adverse current slope and controls turn-off dv/dt to reach the optimal or desired point in terms of electro-magnetic interference (EMI), switching losses, and device stress. In contrast to other works, the proposed control method dynamically and independently controls the turn-off dv/dt as well as turn-off voltage overshoot and ringing in different operating conditions using a single circuit. The moment of transition between dv/dt and voltage overshoot control is accurately initiated by a delay compensation circuit based on turn-off dv/dt. Another feature of the presented work is using a high-frequency laser driver, laser and optical link to send the control signal to a hybrid package consisting of a SiC MOSFET being triggered using two optically-trigged power transistors (OTPTs). The direct optical link precludes the possibility of signal corruption by external EMI. Further, optical (intensity) modulation of the OTPTs, which charge and discharge the SiC MOSFET's gate, enable variable charging and discharging response times for the SiC MOSFET. The proposed control circuit operation and advantages are presented and verified by experimental and numerical results.
机译：本文提出了一种用于高压SiC MOSFET的新颖的自包含光学关断控制方法，该方法用于下一代大功率和高频功率电子应用。关断控制可减少由不利电流斜率引起的关断电压过冲和振铃，并控制关断dv / dt以达到电磁干扰（EMI），开关损耗和器件应力方面的最佳或理想点。与其他工作相反，所提出的控制方法可通过单个电路动态独立地控制截止dv / dt以及截止电压过冲和振铃。 dv / dt和电压过冲控制之间的过渡时刻由基于关断dv / dt的延迟补偿电路精确启动。提出的工作的另一个特征是使用高频激光驱动器，激光和光学链路将控制信号发送到混合封装，该混合封装由SiC MOSFET组成，该MOSFET使用两个光触发功率晶体管（OTPT）触发。直接的光链路排除了外部EMI破坏信号的可能性。此外，OTPT的光学（强度）调制可对SiC MOSFET的栅极进行充电和放电，从而使SiC MOSFET的充电和放电响应时间可变。提出的控制电路的工作原理和优点通过实验和数值结果进行了验证。

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