Efficient simulations of 6σ VT distributions due to Random Discrete Dopants

机译：随机离散掺杂引起的6σV T 分布的高效仿真

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Previously published 3D simulations of 10⁵ statistical samples have shown distinct asymmetry in Random Discrete Dopant induced threshold voltage variations in Bulk MOSFETs. Based on detailed statistical analysis of the underlying physical processes that shape such distributions we present a robust method, capable of accurately predicting random discrete dopant induced threshold voltage variation out to 6–7σ from the mean. This methodology can be used to dramatically reduce the computational cost associated with accurately determining the effect of Random Dopant distribution on threshold voltage in bulk MOSFETs.

机译：先前发布的10 ^{5 统计样本的3D仿真显示，在散装MOSFET中，随机离散掺杂引起的阈值电压变化具有明显的不对称性。基于对影响此类分布的潜在物理过程的详细统计分析，我们提出了一种可靠的方法，该方法能够准确地预测随机离散掺杂剂引起的阈值电压从均值变化到6-7σ。这种方法可用于大大降低与准确确定随机掺杂分布对大MOSFET阈值电压的影响有关的计算成本。}

著录项

来源
《Ultimate Integration of Silicon, 2009. ULIS 2009》|2009年|23-26|共4页
会议地点 Aachen(DE);Aachen(DE)
作者
Reid Dave; Millar Campbell; Roy Gareth; Roy Scott; Asenov Asen;
展开▼
作者单位

Device Modelling Group, University of Glasgow, United Kingdom;

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. LOWER BOUNDS FOR SUP+INF AND SUP*INF AND AN EXTENSION OF CHEN-LIN RESULT IN DIMENSION 3 [J] . Samy Skander Bahoura 数学物理学报（英文版） . 2008,第004期
2. Simulation and experimental research on the parameter distribution of low-pressure Ar/O 2 inductivly coupled plasma [J] . Junlin Chen, Haojun Xu, Xiaolong Wei, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2017,第期

机译：低压AR / O 2 电感耦合等离子体的仿真与实验研究
3. On discrete random dopant modeling in drift-diffusion simulations: physical meaning of 'atomistic' dopants [J] . nobuyuki Sano, Kazuya Matsuzawa, Mikio Mukai Microelectronics & Reliability . 2002,第2期

机译：关于漂移扩散模拟中的离散随机掺杂物建模：“原子”掺杂物的物理含义
4. Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-k/metal gate MOSFETs in the presence of random discrete dopants and random interface traps [J] . Yiming Li, Hui-Wen Cheng Solid-State Electronics . 2012,第期

机译：在存在随机离散掺杂剂和随机界面陷阱的情况下，16nm栅极高k /金属栅极MOSFET的物理和电气特性波动的统计设备仿真
5. Modeling dopant redistribution in SiO2/WSi2/Si structure [C] . Shone F.C., Hansen S.E., Kao D.B., Electron Devices Meeting, 1986 International . -1

机译：SiO 2 / WSi 2 / Si结构中的掺杂物重分布建模
6. Calling Putin's Bluff (Or Not?) An Assessment of Russian Attachment to the INF Treaty and Its Implications [D] . Rowe, Jared. 2018

机译：称普京的虚张声势（或是否虚张声势）是对俄罗斯对INF条约的依恋的评估及其启示
7. Controlled Biomineralization of Magnetite (Fe(inf3)O(inf4)) and Greigite (Fe(inf3)S(inf4)) in a Magnetotactic Bacterium [O] . D. A. Bazylinski, R. B. Frankel, B. R. Heywood, 1995

机译：趋磁细菌中磁铁矿（Fe（inf3）O（inf4））和钙铁矿（Fe（inf3）S（inf4））的受控生物矿化
8. On uniqueness of distribution of a random variable whose independent copies span a subspace in Lp [O] . Astashkin, S, Sukochev, F, Zanin, D 2015

机译：关于独立变量跨越L p 中的子空间的随机变量的分布的唯一性

Efficient simulations of 6σ VT distributions due to Random Discrete Dopants

摘要

著录项

相似文献

相关主题

期刊订阅