• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Vertical-Cavity Surface-Emitting Lasers X >Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs
【24h】

Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

机译：优化高速850 nm VCSEL的氧化物限制层和有源层

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Vertical-cavity surface-emitting lasers with variant compressively strained InGaAlAs quantum wells have been investigated. The valence band structures, optical gain spectra, and threshold properties of InGaAlAs/AlGaAs quantum wells are compared and analyzed. The simulation results indicate that the characteristics of InGaAlAs quantum wells can be improved by increasing the amount of compressive strain in quantum well. Furthermore, the properties of VCSELs with these compressively strained InGaAlAs quantum wells are studied numerically. The results of numerical calculations show that the threshold current and maximum output power can be enhanced by using higher compressively strained InGaAlAs quantum well. However, when the compressive strain is larger than about 1.5%, further improvement of the laser performance becomes minimal. The effects of the position and aperture size of the oxide-confinement layers on the laser performance are also investigated. Variation of the oxide layer design is shown to affect the current distribution which makes the temperature in the active region different. It is the main reason for the power roll-off in the VCSEL devices.
机译：研究了具有可变压缩应变InGaAlAs量子阱的垂直腔面发射激光器。比较并分析了InGaAlAs / AlGaAs量子阱的价带结构，光学增益谱和阈值性质。仿真结果表明，可以通过增加量子阱中的压缩应变量来改善InGaAlAs量子阱的特性。此外，对具有这些压缩应变的InGaAlAs量子阱的VCSEL的特性进行了数值研究。数值计算结果表明，通过使用更高的压缩应变InGaAlAs量子阱，可以提高阈值电流和最大输出功率。但是，当压缩应变大于约1.5％时，激光性能的进一步改善变得最小。还研究了氧化物限制层的位置和孔径大小对激光性能的影响。示出了氧化物层设计的变化会影响电流分布，这会导致有源区中的温度不同。这是VCSEL器件电源下降的主要原因。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号