850-nm VCSELs With p-Type δ -Doping in the Active Layers for Improved High-Speed and High-Temperature Performance

著录项

• 来源
  《IEEE Journal of Quantum Electronics》 |2016年第11期|1-7|共7页
• 作者

  Kai-Lun Chi; Dan-Hua Hsieh; Jia-Liang Yen; Xin-Nan Chen; Jason Jyehong Chen; Hao-Chung Kuo; Ying-Jay Yang; Jin-Wei Shi;

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• 作者单位

  Department of Electrical Engineering, National Central University, Taoyuan, Taiwan;

  Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan;

  Department of Information Technology, Takming University of Science and Technology, TaipeiTaiwan;

  Department of Electrical Engineering, National Central University, Taoyuan, Taiwan;

  Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan;

  Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan;

  Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan;

  Department of Electrical Engineering, National Central University, Taoyuan, Taiwan;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Vertical cavity surface emitting lasers; Cavity resonators; Performance evaluation; Quantum well devices; Doping; Bandwidth; Power generation;

  机译：垂直腔表面发射激光器;腔谐振器;性能评估;量子阱器件;掺杂;带宽;发电;