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Examination of the silicon - silicon carbide interface by ultraviolet photoemission spectroscopy

机译：紫外光发射光谱法检查硅-碳化硅界面

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Photoemission spectroscopy (UPS) was used to investigate the interface properties of deposited silicon on hexagonal 6H-silicon carbide. SiC cleaned in Si flux from a molecular beam epitaxy (MBE) system was used for this study. All processes were accomplished in an ultra high vacuum integrated systgem that allowed all cleaning, deposition, and analysis to be completed without exposure to ambient atmosphere. Thicknesses of sub- to multiple monolayers were deposited and the valence band structure was investigated. The valence band maximum (VBM) was observed to shift for Si depositions greater than 1 monolaryer. THe VBM offset was determined to be 2.4eV for a layer of 60 A Si on SiC. Furthermore, the prominent surface state feature of the silicon carbide (0001)_(si) surface is reduced after Si deposition. The results are discussed in terms of the electronic properties of the Si-SiC interface.
机译：使用光发射光谱法（UPS）来研究六角形6H-碳化硅上沉积的硅的界面特性。这项研究使用了从分子束外延（MBE）系统中的硅焊剂中净化的SiC。所有过程均在超高真空集成系统中完成，该系统可在不暴露于环境气氛的情况下完成所有清洁，沉积和分析。沉积了亚至多个单层的厚度，并研究了价带结构。对于大于1个单晶硅的Si沉积，观察到价带最大值（VBM）移动。对于SiC上的60 A Si层，VBM偏移确定为2.4eV。此外，在沉积Si之后，减小了碳化硅（0001）_（si）表面的突出的表面状态特征。就Si-SiC界面的电子性质讨论了结果。

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