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The Virtual Fab in Microelectronics: the Dry Etch case

机译:微电子学中的虚拟Fab:干蚀刻案例

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摘要

The dry-etch is a critical process step for microelectronic devices manufacturing. Indeed, the scaling down of the device feature-size imposes an increasing complexity of this technological process and, consequently, a cost increase of the Research and Development (R&D). The use of computational tool aimed to simulating the etching process should reduce substantially the R&D cost and time. Moreover, these tools are fundamental to improve the understanding of the etching microscopic mechanism. In general, a noteworthy reduction of the device development cost in whole production cycle can be achieved including these tools in the virtual fab, i.e. a set of numerical tools able to simulate the effects of the full process steps flow. In this paper we discuss the application of a profile evolution simulator as a tool of the virtual jab.
机译:干蚀刻是微电子器件制造的关键工艺步骤。实际上,缩小设备功能部件的大小会增加该技术过程的复杂性,并因此增加研究与开发(R&D)的成本。旨在模拟蚀刻过程的计算工具的使用应大大减少研发成本和时间。此外,这些工具对于提高对蚀刻微观机理的理解至关重要。通常,可以在整个生产周期中显着降低设备开发成本,包括在虚拟工厂中使用这些工具,即一组能够模拟整个工艺步骤流程效果的数值工具。在本文中,我们讨论了配置文件演变模拟器作为虚拟戳戳工具的应用。

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