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首页> 外文期刊>Thin Solid Films >Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices
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Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

机译：沉积温度和热退火对半导体器件干法刻蚀工艺中a-C：H膜干法刻蚀速率的影响

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摘要

The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 ℃ annealed a-C:H films deposited under 450 ℃ was decreased but at 550 ℃ was increased, and the density of all 800 ℃ annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 ℃ annealed a-C:H films deposited at 350 ℃ and 450 ℃ was faster than that of the as-deposited film and that of the 800 ℃ annealed a-C:H films deposited at 350 ℃ and 450 ℃ was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 ℃ deposited a-C:H film was decreased after annealing at 600 ℃ and 800 ℃. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by thermal annealing of the high density, as-deposited a-C:H films. Furthermore, not only the density itself but also the variation of density with thermal annealing need to be elucidated in order to understand the dry etch properties of annealed a-C:H films.
机译：研究了沉积温度和热退火温度对a-C：H膜干蚀刻速率的影响，以增加我们对热退火和干蚀刻速率之间关系的基本了解，并获得低干蚀刻速率的硬掩模。随着沉积和退火温度的升高，烃含量和氢浓度降低。 a-C：H薄膜的I（D）/ I（G）强度比和消光系数随沉积和退火温度的升高而增加，这是因为a-C：H薄膜中sp2键的增加。不成对电子的密度与沉积温度之间，或者不成对电子的密度与退火温度之间没有关系。但是，与退火态的a-C：H薄膜相比，热退火的a-C：H薄膜的未成对电子更少。透射电子显微镜分析表明，热退火后没有任何晶体学变化。沉积膜的密度随着沉积温度的升高而增加。在450℃下沉积的600℃退火a-C：H薄膜的密度降低，但在550℃下升高；在800℃退火的所有薄膜中密度都增加。沉积的a-C：H膜的干蚀刻速率与沉积温度负相关。在350℃和450℃下沉积的600℃退火aC：H膜的干刻蚀速率快于沉积膜的干刻蚀速率;在350℃和450℃下沉积800℃退火的aC：H膜的干刻蚀速率为17。比沉积薄膜快％。然而，在600℃和800℃退火后，550℃沉积的a-C：H膜的干蚀刻速率降低。沉积的薄膜的干蚀刻速率随密度的增加而降低，而退火的a-C：H薄膜的干蚀刻速率却没有。这些结果表明，通过高密度沉积的a-C：H膜的热退火，可以进一步降低用于干蚀刻硬掩模的a-C：H膜的干蚀刻速率。此外，不仅需要阐明密度本身，而且还需要阐明密度随热退火的变化，以便了解退火的a-C：H膜的干法刻蚀性能。

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  • 来源
    《Thin Solid Films》 |2012年第16期|p.5284-5288|共5页
  • 作者

    Seung Moo Lee; Jaihyung Won; Soyoung Yim; Se Jun Park; Jongsik Choi; Jeongtae Kim; Hyeondeok Lee; Dongjin Byun;

  • 作者单位

    Department of Materials Science & Engineering, Korea University, Anam-Dong, Sungbook-Ku, Seoul, 136-701, Republic of Korea TC Technology Team, Samsung Electronics Co. Ltd., Nongseo-Dong, Kiheung-Ku, Yongin-Si, Cyeounggi-Do, 446-711, Republic of Korea;

    TC Technology Team, Samsung Electronics Co. Ltd., Nongseo-Dong, Kiheung-Ku, Yongin-Si, Cyeounggi-Do, 446-711, Republic of Korea;

    Department of Materials Science & Engineering, Korea University, Anam-Dong, Sungbook-Ku, Seoul, 136-701, Republic of Korea;

    TC Technology Team, Samsung Electronics Co. Ltd., Nongseo-Dong, Kiheung-Ku, Yongin-Si, Cyeounggi-Do, 446-711, Republic of Korea;

    TC Technology Team, Samsung Electronics Co. Ltd., Nongseo-Dong, Kiheung-Ku, Yongin-Si, Cyeounggi-Do, 446-711, Republic of Korea;

    TC Technology Team, Samsung Electronics Co. Ltd., Nongseo-Dong, Kiheung-Ku, Yongin-Si, Cyeounggi-Do, 446-711, Republic of Korea;

    TC Technology Team, Samsung Electronics Co. Ltd., Nongseo-Dong, Kiheung-Ku, Yongin-Si, Cyeounggi-Do, 446-711, Republic of Korea;

    Department of Materials Science & Engineering, Korea University, Anam-Dong, Sungbook-Ku, Seoul, 136-701, Republic of Korea;

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  • 正文语种 eng
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  • 关键词

    amorphous carbon; hard mask; annealing; plasma-enhanced chemical vapor deposition; dry etch rate;

    机译：非晶碳硬面具退火;等离子体增强化学气相沉积;干蚀刻率;

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