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首页> 外文会议>World Tribology Congress III 2005 vol.2 >A Methodology To Reduce The Wafer to Wafer Thickness Variation In Chemical Mechanical Planarization (CMP)
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A Methodology To Reduce The Wafer to Wafer Thickness Variation In Chemical Mechanical Planarization (CMP)

机译：减少化学机械平面化（CMP）中晶圆厚度变化的方法学

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摘要

The requirement to consistently achieve the specific target mean film thickness within a tight tolerance (± 80nm) in the IC fabrication process flow is a great challenge. In general, except process time, all other process parameters such as applied pressure, both carrier and platen velocity, slurry flow rate and pad conditioning duration are kept constant in a typical process recipe so as to reduce the source of variations. This paper describes a methodology that can be implemented with or without the end point detection system to predict the optimal process time for CMP based on the hypothesis of contact mechanics. It captures the variation of incoming wafer thickness, material removal rate and erratic behavior of the process. It cal also serve as a comprehensive framework for better recipe development. Experimental work shows that this approach demonstrates promising results in reducing the target mean film thickness variation and works well with different layers and devices.
机译：在IC制造工艺流程中始终要求在严格的公差（±80nm）内始终达到特定目标平均膜厚度的要求是一个巨大的挑战。通常，除工艺时间外，所有其他工艺参数（例如施加压力，载体和压板速度，浆液流速和垫调节持续时间）在典型工艺配方中均保持恒定，以减少变化的根源。本文介绍了一种可以在有或没有终点检测系统的情况下实施的方法，以基于接触力学的假设来预测CMP的最佳处理时间。它捕获到来的晶片厚度，材料去除率和工艺不稳定行为的变化。它也可以作为更好的配方开发的综合框架。实验工作表明，该方法在减少目标平均膜厚变化方面显示出令人鼓舞的结果，并且适用于不同的层和器件。

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