首页> 外文会议>World Tribology Congress III vol.1; 20050912-16; Washington,DC(US) >CMP AND NANO-CHARACTERIZATION OF MAGNETIC HEAD WAFER FILMS
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CMP AND NANO-CHARACTERIZATION OF MAGNETIC HEAD WAFER FILMS

机译:磁头晶圆薄膜的CMP和纳米表征

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Similar to the semiconductor sector improving processing power by decreasing device sizes, the information storage sector has been working to decrease device sizes in read/write heads. Chemical mechanical polishing (CMP) is a critical enabling technology for terabyte storage systems and other systems consisting of nanotechnology. A commercial CMP polisher was used, and the experimental material removal rates (MRR) are presented. Since the MRR is a function of the load, relative speed, and film hardness, a nano-indention technique was employed to characterize mechanical properties of the permalloy (NiFe) films. A basic MRR model was developed to compare to the experimental results.
机译:类似于半导体部门通过减小设备尺寸来提高处理能力,信息存储部门一直在努力减小读/写头中的设备尺寸。化学机械抛光(CMP)是太字节存储系统和其他由纳米技术组成的系统的关键启用技术。使用了商用CMP抛光机,并给出了实验材料去除率(MRR)。由于MRR是负载,相对速度和薄膜硬度的函数,因此采用纳米压痕技术来表征坡莫合金(NiFe)薄膜的机械性能。开发了基本的MRR模型以与实验结果进行比较。

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