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首页> 外文会议>Zinc Oxide Materials and Devices II; Proceedings of SPIE-The International Society for Optical Engineering; vol.6474 >Characterization of Ag doped p-type ZnO films
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Characterization of Ag doped p-type ZnO films

机译：Ag掺杂的p型ZnO薄膜的表征

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Ag-doped ZnO thinf films have been fabricated by pulsed laser deposition. Thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically investigated to verify the doping mechanism of Ag doped ZnO thin film depending on deposition temperature. The fabricated p-type Ag doped ZnO films shows the hole concentration in the range from 4.9 × 10~(16) to 6.0 × l0~(17)cm~(-3).ZnO exhibits n-type conductivity due to its native defects, such as zinc interstitials and oxygen vacancies. This strong n-type conductivity of ZnO restricts the application and it is difficult to fabricate p-type conductive ZnO. Therefore, research on ZnO has been mainly focused on the simple synthesis of p-type ZnO and intrinsic ZnO having insulating properties using various techniques and studying its doping properties . Recently, Li et al.~5 reported that a ZnO p - n diode could be fabricated using a structure of ZnO:Ag/ZnO homo-junction on n-Si substrate. In previous letter, we also reported that Ag-doped p-type ZnO thin films have been fabricated and characterized. In this study, thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically performed to investigate doping mechanism of Ag doped ZnO thin film depending on deposition temperature,.Ag doped ZnO thin films were grown on (0001) sapphire substrates by pulsed laser deposition (PLD). The electrical properties of Ag-doped ZnO films have been investigated by Hall measurement. Thermal behavior of the samples was measured in the temperature range from 30℃ to 400℃. XPS analysis of Ag doped ZnO thin films were performed to investigate the effects of deposition temperature on the film composition and the chemical bonding.Table 1 shows the Hall measurement results of the Ag doped ZnO thin film at various deposition temperatures. In our previous report, we reported that the electrical properties are divided by different three temperature regions from 100C to 175C (region I), 175C to 275℃ (region II), and 275℃ to 400℃ (region III). In each region, Ag doped ZnO thin films exhibit various electrical properties, such as semi-insulating (region I), p-type (region II), and n-type (region III) properties depending on deposition temperatures. In the case of Ag doped ZnO films deposited at the region I, it shows semi-insulator behavior with a low carrier concentration and high resistivity. While Ag-doped ZnO films deposited at the region II exhibit p-type conductivity. The hole concentration, carrier mobility, and resistivity of p-type Ag-doped ZnO films are measured to be in the range from 4.9 ×10~(16) to 6.0 × 10~(17) cm~(-3), 0.29 to 2.32 cm~2/Vs, and 34 to 54 Ω cm, respectively. The Ag doped ZnO films deposited at the region III show a transition from p-type to n-type conductivity with the electron concentration of up to 2.27 × 10~(20) cm~(-3). This means that a role of Ag atoms in ZnO is changed by depending on deposition temperature. Consequently, it is possible to control of conductivity of ZnO films from intrinsic ZnO to p-type ZnO using Ag dopant and suitable deposition conditions.
机译：已通过脉冲激光沉积制备了掺银的ZnO薄膜。系统地研究了热分析和X射线光电子能谱（XPS），以验证Ag掺杂的ZnO薄膜根据沉积温度的掺杂机理。制备的p型掺杂Ag的ZnO薄膜的空穴浓度在4.9×10〜（16）至6.0×l0〜（17）cm〜（-3）范围内.ZnO由于其固有缺陷而呈现n型导电性，例如锌间隙和氧气空位。 ZnO的这种强n型导电性限制了其应用，并且难以制造p型导电ZnO。因此，关于ZnO的研究主要集中在使用各种技术简单地合成p型ZnO和具有绝缘特性的本征ZnO并研究其掺杂特性。最近，Li et al。〜5报道使用n-Si衬底上的ZnO：Ag / ZnO同质结结构可以制造ZnO p-n二极管。在上一封信中，我们还报道了已制备并表征了掺Ag的p型ZnO薄膜。本研究系统地进行了热分析和X射线光电子能谱（XPS），以研究Ag掺杂的ZnO薄膜根据沉积温度的掺杂机理.Ag掺杂的ZnO薄膜通过脉冲激光在（0001）蓝宝石衬底上生长。沉积（PLD）。 Ag掺杂的ZnO薄膜的电学性能已通过Hall测量进行了研究。在30℃至400℃的温度范围内测量样品的热行为。进行了Ag掺杂的ZnO薄膜的XPS分析，以研究沉积温度对薄膜组成和化学键合的影响。表1显示了Ag掺杂的ZnO薄膜在不同沉积温度下的霍尔测量结果。在我们以前的报告中，我们报道了电性能被分为三个不同的温度区域：100C至175C（I区），175C至275℃（II区）和275℃至400℃（III区）。在每个区域中，Ag掺杂的ZnO薄膜根据沉积温度表现出各种电性能，例如半绝缘（I区），p型（II区）和n型（III区）性能。对于在区域I处沉积的Ag掺杂的ZnO薄膜，它表现出半绝缘层的行为，具有低载流子浓度和高电阻率。而沉积在区域II处的Ag掺杂的ZnO薄膜显示出p型导电性。 p型掺杂Ag的ZnO薄膜的空穴浓度，载流子迁移率和电阻率的测量范围为4.9×10〜（16）至6.0×10〜（17）cm〜（-3），0.29至2.32 cm〜2 / Vs和34至54Ωcm在Ⅲ区沉积的Ag掺杂ZnO薄膜表现出从p型到n型导电性的跃迁，电子浓度高达2.27×10〜（20）cm〜（-3）。这意味着Ag原子在ZnO中的作用根据沉积温度而改变。因此，可以使用Ag掺杂剂和适当的沉积条件来控制从本征ZnO到p型ZnO的ZnO膜的电导率。

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