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Novel method for formation and characterization of self-assembling block copolymer nanostructures.

机译：自组装嵌段共聚物纳米结构的形成和表征的新方法。

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Lithographic processes capable of achieving feature sizes on the order of nanometers are required to facilitate further developments in nanotechnology. For devices where a repeating pattern is desired, it is possible to create a nanoscale template by applying a diblock copolymer to a wafer surface. The periodic pattern that forms in the copolymer can be aligned to step edge features etched into the substrate. Further advances in nanoscale device design can be made if self-assembly is accomplished at a specific location on a surface. This research focuses on obtaining a straight step edge to align a lattice of spherical microdomains formed in a thin layer of the diblock copolymer polystyrene-poly(ethylene-alt-propylene) as a method to aid with finding the optimal process parameters by varying the step height and the thickness of the polymer layer applied over a relatively large test pattern comprised of said step edges. This work develops a combinatorial method to aid with finding the optimal process parameters by varying the step height and the thickness of the polymer layer applied over a relatively large test pattern comprised of said step edges. Resulting nanostructure formations form at these step edges, giving a means of locating the features for more reliable and predictable pattern transfer processes. The key feature of the step edge is edge straightness, and this work also describes the fabrication experiments that result in lithographically defined straight edges using optimized microlithography techniques.;The results of this work show that extremely straight step edges of less than 2 nm RMS wiggle can be accomplished with process parameters of fresh Futurrex PR 1-1000A positive photoresist applied at 1000 rpm for 40 seconds, soft baked at 120° C for 2 minutes, contact exposed with a dose of 5.6 mW/cm2 for 2 seconds, developed for 2 minutes, and a post develop baked at 140° C for 1 minute. Additionally, the combinatorial optimization of locating self-assembly along a step edge shows that self assembled features in polystyrene-poly(ethylene-alt-propylene) can be located along step edges with heights of roughly 8.5 nm to 38 nm and a diblock polymer thickness of 12 nm to 35 nm. This demonstrates the effectiveness of the combinatorial approach determining optimal process parameters and also demonstrates that self-assembled structures in diblock copolymer films can be located along step edges of appropriate straightness and height.
机译：需要能够实现纳米级特征尺寸的光刻工艺，以促进纳米技术的进一步发展。对于需要重复图案的器件，可以通过将二嵌段共聚物应用于晶圆表面来创建纳米级模板。在共聚物中形成的周期性图案可以与蚀刻到基板中的台阶边缘特征对齐。如果在表面的特定位置完成自组装，则可以在纳米级器件设计上取得进一步的进步。这项研究的重点是获得一条直线台阶边缘，以对准形成在二嵌段共聚物聚苯乙烯-聚（乙烯-alt-丙烯）薄层中的球形微区晶格，以此作为通过改变台阶来找到最佳工艺参数的方法在由所述台阶边缘组成的相对较大的测试图案上施加的聚合物层的高度和厚度。这项工作开发了一种组合方法，可通过改变阶梯高度和施加在由所述阶梯边缘组成的相对较大的测试图案上的聚合物层的厚度来帮助找到最佳工艺参数。在这些台阶边缘处形成纳米结构，从而提供了一种定位特征的方法，以实现更可靠和可预测的图案转移过程。台阶边缘的关键特征是边缘平直度，并且该工作还描述了使用优化的微光刻技术通过光刻定义直线边缘的制造实验。这项工作的结果表明，小于2 nm RMS摆动的极直台阶边缘可以使用新鲜的Futurrex PR 1-1000A正性光致抗蚀剂的工艺参数完成，以1000 rpm的速度施加40秒，在120°C下软烘烤2分钟，以5.6 mW / cm2的剂量暴露2秒，显影2次。 1分钟后，显影在140°C下烘烤1分钟。此外，沿台阶边缘定位自组装的组合优化结果表明，聚苯乙烯-聚（乙烯-alt-丙烯）中的自组装特征可以沿台阶边缘定位，高度约为8.5 nm至38 nm，且嵌段聚合物厚度为二嵌段12nm至35nm。这证明了确定最佳工艺参数的组合方法的有效性，还证明了二嵌段共聚物薄膜中的自组装结构可以沿着具有适当平直度和高度的台阶边缘放置。

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