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首页> 外文学位 >Synthesis and characterization of CZT nanowires and its potential as a gamma ray detector.
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Synthesis and characterization of CZT nanowires and its potential as a gamma ray detector.

机译：CZT纳米线的合成与表征及其作为伽马射线探测器的潜力。

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摘要

Bulk single crystals of Cd1-xZnxTe (x=0.04 to x=0.2) compound semiconductor is used for room temperature radiation detection. The production of large volume of Cd1-xZnxTe with low defect density is expensive. As a result there is a growing research interest in the production of nanostructured compound semiconductors such as Cd1-x ZnxTe in an electrochemical route. In this investigation, Cd1-xZnxTe ternary compound semiconductor, referred as CZT, was electrodeposited in the form of nanowires onto a TiO2 nanotubular template from propylene carbonate as the non-aqueous electrolyte, using a pulse-reverse electrodeposition process at 130ºC. The template acted as a support in growing ordered nanowire of CZT which acts as a one dimensional conductor. Cyclic Voltammogram (CV) studies were conducted in determining the potentials for the growth of nanowires of uniform stoichiometry. The morphologies and composition of CZT were characterized by using SEM, TEM and XRD. The STEM mapping carried out on the nanowires showed the uniform distribution of Cd, Zn and Te elements. TEM image showed that the nanowires were polycrystalline in nature. The Mott-Schottky analysis carried on the nanowires showed that the nanowires were a p-type semiconductor. The carrier density, band gap and resistivity of the Cd0.9Zn0.1Te nanowires were 4.29x1013 cm-3, 1.56 eV and 2.76x10 11O-cm respectively. The high resistivity was attributed to the presence of deep defect states such as cadmium vacancies or Te antisites which were created by the anodic cycle of the pulse-reverse electrodeposition process. Stacks of series connected CZT nanowire arrays were tested with different bias potentials. The background current was in the order of tens of picoamperes. When exposed to radiation source Amerecium-241 (60 KeV, 4 muCi), the stacked CZT nanowires arrays showed sensing behavior. The sensitivity of the nanowire arrays increased as the number of stacks increased. The preliminary results indicate that the CZT nanowire arrays can be used as a potential X-ray and low energy gamma ray detector material at room temperature with a much low bias potential (0.7--4V) as against 300--500 V applied in the commercial bulk detector materials.
机译：Cd1-xZnxTe（x = 0.04至x = 0.2）化合物半导体的块状单晶用于室温辐射检测。大量生产具有低缺陷密度的Cd1-xZnxTe价格昂贵。结果，对通过电化学途径生产纳米结构化合物半导体（例如Cd1-x ZnxTe）的研究兴趣日益增长。在这项研究中，Cd1-xZnxTe三元化合物半导体（称为CZT）以130℃的反向脉冲电沉积工艺，以纳米线的形式从碳酸亚丙酯作为非水电解质以纳米线形式电沉积到TiO2纳米管模板上。模板在CZT有序纳米线的生长中起支撑作用，而CZT有序纳米线充当一维导体。进行了循环伏安法（CV）研究，以确定均匀化学计量的纳米线的生长潜力。用SEM，TEM和XRD对CZT的形貌和组成进行了表征。在纳米线上进行的STEM映射显示了Cd，Zn和Te元素的均匀分布。 TEM图像表明，纳米线本质上是多晶的。对纳米线进行的Mott-Schottky分析表明，纳米线是p型半导体。 Cd0.9Zn0.1Te纳米线的载流子密度，带隙和电阻率分别为4.29x1013 cm-3、1.56 eV和2.76x10 11O-cm。高电阻率归因于深缺陷状态的存在，例如通过脉冲反向电沉积过程的阳极循环产生的镉空位或Te反位。串联连接的CZT纳米线阵列的堆栈已用不同的偏置电势进行了测试。本底电流约为数十皮安。当暴露于辐射源Amerecium-241（60 KeV，4 muCi）时，堆叠的CZT纳米线阵列显示出感应行为。纳米线阵列的灵敏度随着堆叠数量的增加而增加。初步结果表明，CZT纳米线阵列可在室温下用作潜在的X射线和低能伽马射线探测器材料，其偏置电势（0.7--4V）相对较低，而在室温下施加的电压为300--500 V商业批量探测器材料。

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  • 作者

    Gandhi, Thulasidharan.;

  • 作者单位

    University of Nevada, Reno.;

  • 授予单位 University of Nevada, Reno.;
  • 学科 Engineering Metallurgy.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 128 p.
  • 总页数 128
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 冶金工业;
  • 关键词

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