• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >High precision radiometry using an indium arsenide/indium gallium arsenide quantum dot-in-a-well infrared focal plane array.
【24h】

High precision radiometry using an indium arsenide/indium gallium arsenide quantum dot-in-a-well infrared focal plane array.

机译：使用砷化铟/砷化铟镓量子阱中点红外焦平面阵列的高精度辐射测定。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Sensitivity, noise and performance criteria were evaluated for different varieties of InAs/InGaAs quantum dots-in-a-well (DWELL) and quantum dots-in-a-double-well (double DWELL) focal plane arrays (FPAs). These characteristics were measured and compared to those measured from a commercial quantum well infrared photodetector (QWIP) in the same experimental setup to allow a side-by-side comparison of these devices with many system variables held constant. The QWIP device was expected to perform the best, due to its higher number of active regions and enhancement grating, but the performance of the other devices was unknown. The DWELL and double DWELL samples were grown by molecular beam epitaxy (MBE) and fabricated into 320 x 256 pixel FPAs with indium bumps via standard lithography at the University of New Mexico. All samples, including the 320 x 256 pixel QWIPs were hybridized to Indigo Systems Corporation ISC9705 read out integrated circuits and device performance was measured with the SE-IR Corporation CamIRa test system at part cooling of 60°K, 70°K and 80°K. The QWIP performed best at lower device cooling, but could not operate at 80°K. The DWELL device demonstrated favorable operation at 60°K, but performance at 70°K was poor and the device did not perform at 80°K. Both double DWELL devices under test performed well across all device temperatures. The mean NEDT for the DWELL was 143°mK and the two double DWELL devices were 105.7°mK and 160.6°mK at 60°K part temperature. The double DWELL devices showed the lower noise and higher responsivity at higher device temperatures. This document also reviewed methods of non-uniformity correction and suggested methods to improve performance and results by carefully choosing the method of correction and the values.
机译：针对不同种类的InAs / InGaAs孔量子点（DWELL）和双孔量子点（double DWELL）焦平面阵列（FPA）评估了灵敏度，噪声和性能标准。在相同的实验设置中，对这些特性进行了测量并与从商用量子阱红外光电探测器（QWIP）所测量的特性进行了比较，从而可以在保持许多系统变量不变的情况下对这些设备进行并排比较。预期QWIP器件将具有最佳的性能，因为它具有更多的有源区和增强光栅，但是其他器件的性能未知。 DWELL和Double DWELL样品通过分子束外延（MBE）生长，并通过新墨西哥大学的标准光刻技术制成具有铟凸点的320 x 256像素FPA。将包括320 x 256像素QWIP在内的所有样品与Indigo Systems Corporation ISC9705读出的集成电路进行杂交，并使用SE-IR Corporation CamIRa测试系统在60°K，70°K和80°K的部分冷却下测量设备性能。 QWIP在较低的设备冷却条件下表现最佳，但无法在80°K下运行。 DWELL器件在60°K时表现出良好的操作性能，但在70°K时的性能很差，并且该器件在80°K时没有性能。两种双DWELL器件在所有器件温度下均表现良好。 DWELL的平均NEDT为143°mK，两个双DWELL设备在部件温度为60°K时分别为105.7°mK和160.6°mK。双DWELL器件在较高的器件温度下显示出较低的噪声和较高的响应度。本文档还回顾了非均匀性校正方法，并建议了通过仔细选择校正方法和值来提高性能和结果的方法。

著录项

  • 作者

    Andrews, Jonathan R.;

  • 作者单位

    The University of New Mexico.;

  • 授予单位 The University of New Mexico.;
  • 学科 Engineering Electronics and Electrical.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 172 p.
  • 总页数 172
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号