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High power 121.6 nm radiation source for advanced lithography.

机译：高功率121.6 nm辐射源，用于高级光刻。

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摘要

A novel high power 121.6 nm radiation source based on dielectric barrier discharge (DBD) has been developed for advanced lithography applications. The discharge unit consists basically of a hollow tube made of a dielectric material with two loop-electrodes wrapped on the outside of the tube. The discharge is generated inside the tube by means of a 13.56 MHz RF power system. The discharge unit is located in a vacuum chamber that provides a dynamic gas flow and windows for radiation transmission.; A very intense and spectrally clean Lyman-alpha line at 121.6 nm was observed by operating the DBD discharge in a mixture of high-pressure Ne (200--800 Torr) with a small admixture of hydrogen (less than 0.1%). The hydrogen Lyman-alpha line at 121.6 nm was emitted via near-resonant energy transfer between Ne excimer and H2, which leads to the dissociation of H2 and the excitation of atomic hydrogen. The Lyman-alpha emission intensity depends on the operating parameters of the discharge, such as gas pressure, gas mixture, gas flow rate and discharge geometry. By optimizing these parameters, the radiation power at 121.6 nm was maximized. A radiation source with 8 watts of optical power at 121.6 nm wavelength with a narrow line width (Deltalambda 0.03 nm) and stable operation was achieved. Since the lamp operation is based on RF driven plasma, one method to increase the power was to couple more RF power in discharge. By applying a proper RF network and optimizing the electrode area and gap, the RF reflection losses were reduced to less than 2%. With the water-cooling circuit, the temperature of discharge unit was maintained at room temperature and the lamp operation was able to maintain over 100 hours of continuous use.; The discharge was optimized by simulation using XOOPIC software, which models the plasma as discrete macroparticles interacting with EM field. Some plasma parameters, such as the spatial distribution of electrons and ions, electron energy and density, were calculated from simulation. The results from simulation were in agreement with our experimental measurements. By modeling the operating parameters of the discharge, such as pressure, discharge tube diameter, electrode area and gap, high radiation power at 121.6 nm was achieved.; The lamp source was sent to MIT-Lincoln Lab for 121.6 nm lithography applications. From the initial results of the experiments, patterns with 63 nm feature size lines were obtained. One other application of lamp was explored where direct metal pattern writing by VUV photodissociation of a palladium acetate (Pd(OCOCH3)2, Pdac) was achieved. Palladium metal pattern was directly written on glass substrate by using a MgF2 mask, which has feature linewidth of 1 mum.; A stable, high power, and narrow spectral width radiation source has been developed. It is suitable for photolithography and nanofabrication applications.
机译：已开发出一种基于介电势垒放电（DBD）的新型高功率121.6 nm辐射源，用于先进的光刻应用。放电单元主要由空心管制成，该空心管由介电材料制成，两个环形电极缠绕在管的外部。放电是通过13.56 MHz射频功率系统在灯管内部产生的。排放单元位于真空室内，该真空室内提供动态气流和用于辐射传输的窗口。通过在高压Ne（200--800 Torr）和少量氢（小于0.1％）的混合物中操作DBD放电，观察到非常强烈且光谱清晰的Lyman-α线在121.6 nm处。通过Ne准分子和H2之间的近共振能量转移，发出了121.6 nm的氢Lyman-alpha线，这导致了H2的解离和氢原子的激发。 Lyman-α发射强度取决于放电的运行参数，例如气压，气体混合物，气体流速和放电几何形状。通过优化这些参数，可以使121.6 nm处的辐射功率最大化。获得了在121.6 nm波长处具有8瓦光功率的辐射源，具有较窄的线宽（Deltalambda <0.03 nm），并且工作稳定。由于灯的操作基于RF驱动的等离子体，因此增加功率的一种方法是在放电中耦合更多的RF功率。通过应用适当的RF网络并优化电极面积和间隙，RF反射损耗可减少至不到2％。通过水冷却回路，将放电单元的温度保持在室温，并且灯的操作能够保持超过100小时的连续使用。通过使用XOOPIC软件进行仿真优化了放电，该软件将血浆建模为与EM场相互作用的离散大颗粒。通过模拟计算了一些等离子体参数，例如电子和离子的空间分布，电子能量和密度。仿真结果与我们的实验测量结果一致。通过对放电的工作参数进行建模，例如压力，放电管直径，电极面积和间隙，可实现121.6 nm的高辐射功率。灯源被发送到MIT-Lincoln Lab进行121.6 nm光刻应用。从实验的初始结果，获得具有63 nm特征尺寸线的图案。探索了灯的另一种应用，其中通过VUV光解乙酸钯（Pd（OCOCH3）2，Pdac）实现了直接的金属图案写入。通过使用MgF 2掩模将钯金属图案直接写在玻璃基板上，该掩模的特征是线宽为1μm。已经开发出稳定，高功率和窄光谱宽度的辐射源。它适用于光刻和纳米加工应用。

著录项

  • 作者

    Yan, Jianxun.;

  • 作者单位

    Old Dominion University.;

  • 授予单位 Old Dominion University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 146 p.
  • 总页数 146
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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