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Amorphous indium gallium zinc oxide thin film transistor for future optoelectronics.

机译：用于未来光电子学的非晶铟镓锌氧化物薄膜晶体管。

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摘要

After initial report of its potential use for flexible/large area electronics, amorphous In-Ga-Zn-O (a-IGZO) is now emerging worldwide as a new semiconductor for next generation thin-film transistor (TFT) flat panel displays and imagers. This dissertation work examines in detail the basic properties and physics of the a-IGZO TFTs, including the photofield-effect, numerical simulations, electrical instability and noise characteristics.;Our a-IGZO TFTs have following electrical performance: field-effect mobility (mueff) of 7-12.3 cm2V-1s -1, threshold voltage of 1∼3V, subthreshold swing of 130∼420mV/decade and on/off current ratio over 108. Aluminum and titanium are both suitable for source/drain (S/D) electrodes with the contact resistivity (rC) lower than 10-3O-cm2. The active layer thickness was also found to have a major impact on S/D series resistance. To accurately model the TFT current-voltage (1/V) properties, a gate-to-source voltage dependent mueff model is proposed.;Light wavelength and intensity dependent photo-responses were studied. The a-IGZO TFT is stable under visible light illumination (460∼660nm). TFT off-state drain current starts to increase when the photon energy is higher than its band-gap (∼3.05eV); and we observed a high UV-photocurrent conversion efficiency. In addition, the a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than the values of hydrogenated amorphous silicon (a-Si:H). The DOS model for a-IGZO was then developed. In this model, the donor-like states are proposed to be associated with oxygen vacancy in a-IGZO. We showed through numerical simulation that the a-IGZO TFT has a very sharp conduction band-tail slope (Ea=13meV). The impacts of rC and DOS on TFT electrical properties were also studied.;Bias-temperature-stress (BTS) induced electrical instability was investigated. Our results suggest that the observed shifts in TFT I/V curves are primarily due to channel charge injection/trapping. The validity of using stretched-exponential model in simulating the time, voltage and temperature dependences of BTS data was demonstrated for a-IGZO TFTs. Finally, the TFT low frequency noise properties were examined. The 1/f noise is the dominant source in a-IGZO TFT and can be modeled by Hooge mobility fluctuation theory. The a-IGZO has a lower Hooge's parameter than a-Si:H and may be better used in imaging applications.
机译：在初步报告了其在柔性/大面积电子产品中的潜在用途之后，非晶In-Ga-Zn-O（a-IGZO）现在正在全球范围内出现，作为下一代薄膜晶体管（TFT）平板显示器和成像仪的新型半导体。本文详细研究了a-IGZO TFT的基本特性和物理特性，包括光场效应，数值模拟，电不稳定性和噪声特性。;我们的a-IGZO TFT具有以下电性能：场效应迁移率（mueff ）为7-12.3 cm2V-1s -1，阈值电压为1〜3V，亚阈值摆幅为130〜420mV /十倍，开/关电流比超过108。铝和钛均适合于源/漏（S / D）接触电阻率（rC）低于10-3O-cm2的电极。还发现有源层厚度对S / D串联电阻有重要影响。为了精确地建立TFT电流-电压（1 / V）特性的模型，提出了栅源电压相关的mueff模型。研究了光波长和强度相关的光响应。 a-IGZO TFT在可见光（460〜660nm）下稳定。当光子能量高于其带隙（〜3.05eV）时，TFT截止状态漏极电流开始增加；并且我们观察到了很高的UV-光电流转换效率。另外，提取了a-IGZO的中间间隙状态密度（DOS），并且比氢化非晶硅（a-Si：H）的值低一个数量级。然后开发了用于a-IGZO的DOS模型。在该模型中，提议的供体样状态与a-IGZO中的氧空位有关。我们通过数值模拟表明，a-IGZO TFT具有非常尖锐的导带尾斜率（Ea = 13meV）。还研究了rC和DOS对TFT电学性能的影响。;研究了偏置温度应力（BTS）引起的电不稳定性。我们的结果表明，在TFT I / V曲线中观察到的偏移主要归因于沟道电荷注入/俘获。对于a-IGZO TFT，证明了使用拉伸指数模型模拟BTS数据的时间，电压和温度依赖性的有效性。最后，检查了TFT低频噪声特性。 1 / f噪声是a-IGZO TFT的主要来源，可以通过Hooge迁移率波动理论进行建模。 a-IGZO的Hooge参数比a-Si：H低，并且可能会更好地用于成像应用。

著录项

  • 作者

    Fung, Tze-Ching.;

  • 作者单位

    University of Michigan.;

  • 授予单位 University of Michigan.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 173 p.
  • 总页数 173
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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