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RF-MEMS BAW resonators---Effective parameters modeling & characterization.

机译：RF-MEMS BAW谐振器---有效参数建模与表征。

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摘要

The wireless industry, especially the mobile applications has rapidly grown with the maturity of Si integrated technologies. Increasing innovative applications demand newer technologies or novel processes and, at the same time should integrate with existing standard Complementary Metal-Oxide-Semiconductor (CMOS) technology. Bulk Acoustic Wave (BAW) resonators form core elements in highly advanced Radio frequency (RF) front end and radio modules. They are of prime importance due to their small size and low loss. Their impact on radio frequency and sensing systems has motivated the development of new innovative applications.;The principle of acoustic resonance at Gigahertz frequencies is achieved using Thin Film Resonators (TFRs). They are manufactured in CMOS foundry for low cost batch fabrication and potential integration with other integrated circuitry. Accurate modeling of the electrical performance of these RF-MEMS (Microelectromechanical Systems) resonators depends on how precisely the values of physical parameters of the materials used in its design are known and if all the requirements have been met. Hence this Ph.D. dissertation addresses these sophisticated designing, fabrication and characterization aspects.;During our industrial productions of these resonators it was found that these parameters generally vary from one material manufacturer to another and the processing methods used during fabrication. Hence a method is also demanded to determine these values based on resonator's electrical measurements. We have developed a simple, quick, and inexpensive method to determine the effective acoustic velocity and density values of the materials used in the resonator. The experiment comprises of generating various electrical impedance peaks in the wideband spectrum of the resonator that are material sensitive and correlate to the acoustic properties of the structure. The same resonators were tested and matched over temperature variations to generate information for the extraction of their temperature coefficients of frequency as well. The materials used in our experiment were Silicon Dioxide (SiO2), Molybdenum (Mo), Aluminum Nitride (AlN), Tungsten (W) and Aluminum Copper (AlCu).
机译：随着Si集成技术的成熟，无线行业（尤其是移动应用程序）已迅速发展。越来越多的创新应用需要更新的技术或新颖的工艺，同时应与现有的标准互补金属氧化物半导体（CMOS）技术集成。体声波（BAW）谐振器构成了高级射频（RF）前端和无线电模块中的核心元件。由于它们的体积小且损耗低，它们是最重要的。它们对射频和传感系统的影响推动了新的创新应用的发展。;使用薄膜谐振器（TFR）实现了千兆赫兹频率的声谐振原理。它们在CMOS代工厂中制造，以实现低成本的批量制造并可能与其他集成电路集成。这些RF-MEMS（微机电系统）谐振器的电性能的准确建模取决于其设计中所用材料的物理参数值的精确程度以及是否满足所有要求。因此，这个博士。论文解决了这些复杂的设计，制造和表征方面。在我们的这些谐振器的工业生产过程中，发现这些参数通常因制造商和制造商所使用的处理方法而异。因此，还需要一种基于谐振器的电测量来确定这些值的方法。我们已经开发出一种简单，快速且便宜的方法来确定谐振器中使用的材料的有效声速和密度值。该实验包括在谐振器的宽带频谱中产生各种电阻抗峰，这些电阻抗峰对材料敏感并且与结构的声学特性相关。对相同的谐振器进行了测试，并根据温度变化进行匹配，以生成信息以提取其温度频率系数。我们的实验中使用的材料是二氧化硅（SiO2），钼（Mo），氮化铝（AlN），钨（W）和铝铜（AlCu）。

著录项

  • 作者

    Roy, Ambarish.;

  • 作者单位

    University of Massachusetts Lowell.;

  • 授予单位 University of Massachusetts Lowell.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 207 p.
  • 总页数 207
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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