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首页> 外文学位 >Ion-Sensitive Field Effect Transistor (ISFET) for MEMS Multisensory Chips at RIT.
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Ion-Sensitive Field Effect Transistor (ISFET) for MEMS Multisensory Chips at RIT.

机译：RIT的MEMS多传感器芯片的离子敏感场效应晶体管（ISFET）。

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摘要

This study involves the design and fabrication of an Ion-Sensitive Field Effect Transistor (ISFET), which is aimed to be incorporated into the multisensory chips fabricated at RIT. ISFETs are used for various purposes in biomedical, medicine, and chemical applications and have advantages such as small size, low power consumption, robustness, and fast response time, over the ion-selective electrode (ISE) counterparts. The capability of fabricating ISFETs in a standard CMOS process let them to be used in sensor systems together with the dedicated signal processing circuitry which in turn makes portable applications possible. The ISFET fabricated in this study have a SiO2 gate oxide and on top of that a Si3N4 layer. The latter layer, in addition to passivating the device, serves as a pH sensitive membrane. The overall process has 5 mask levels and the electrical tests, which were performed using buffer solutions with varying pH values, indicated that the transistor can be employed to measure the pH of solutions. ISFETs were also tested against environmental conditions such as temperature, long term exposure to various pH-valued solutions and it is found out that the FETs are quite robust in terms of temperature stability and long term drift. In addition to their pH sensing properties, these devices were also taken one step ahead to sense chloride ion (Cl-) concentration via preparing a Cl --sensitive membrane stacked on top of the Si3N4 layer. Electrical tests, which were performed in solutions with various Cl - concentrations, showed that the modified ISFETs are also Cl - sensitive.
机译：这项研究涉及离子敏感场效应晶体管（ISFET）的设计和制造，该晶体管旨在整合到RIT制造的多传感器芯片中。 ISFET在生物医学，医学和化学应用中有多种用途，与离子选择电极（ISE）相比，具有小尺寸，低功耗，坚固性和快速响应时间等优点。以标准CMOS工艺制造ISFET的能力使其可以与专用信号处理电路一起用于传感器系统，这又使便携式应用成为可能。在这项研究中制造的ISFET具有SiO2栅极氧化物，并在其顶部具有Si3N4层。除钝化装置外，后一层还用作pH敏感膜。整个过程有5个掩模级别，并且使用具有不同pH值的缓冲溶液进行的电气测试表明，该晶体管可用于测量溶液的pH。还对ISFET进行了环境条件测试，例如温度，长期暴露于各种pH值溶液中，并且发现FET在温度稳定性和长期漂移方面非常强大。除了具有pH感应特性外，这些设备还通过制备堆叠在Si3N4层顶部的Cl敏感膜来感应氯离子（Cl-）浓度，领先一步。在具有各种Cl-浓度的溶液中进行的电气测试表明，改进的ISFET也是Cl-敏感的。

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  • 作者

    Baylav, Murat.;

  • 作者单位

    Rochester Institute of Technology.;

  • 授予单位 Rochester Institute of Technology.;
  • 学科 Electrical engineering.
  • 学位 M.S.
  • 年度 2010
  • 页码 75 p.
  • 总页数 75
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 公共建筑;
  • 关键词

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