ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET) WITH NANOSTRUCTURES AND FABRICATION METHOD THEREOF

• 1. 用于制造纳米晶的、气体敏感的层结构的方法，相应的纳米晶的、气体敏感的层结构和具有相应的纳米晶的、气体敏感的层结构的气体传感器 [P] . 中国专利： CN110959115A . 2020-04-03
• 2. 一种半导体离子敏场效应晶体管ISFET的制备方法 [P] . 中国专利： CN108767012A . 2018-11-06
• 3. A PROCESS FOR THE MANUFACTURE OF ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET) WITH A HIGH ASPECT RATIO [P] . IN260489B . 2014-05-02

  机译： 高纵横比的离子敏感场效应晶体管（ISFET）的制造过程

• 4. A PROCESS FOR THE MANUFACTURE OF ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET) WITH A HIGH ASPECT RATIOIN260489A1 [P] . IN2006DE00257A . 2007-08-17

  机译： 具有高纵横比的离子敏感场效应晶体管（ISFET）的制造工艺[IN260489A1]

• 5. Circuit arrangement containing an ion-sensitive field-effect transistor (ISFET) and an evaluation circuit [P] . 德国专利： DE3236757A1 . 1984-04-05

  机译： 包含离子敏感场效应晶体管（ISFET）和评估电路的电路装置

• 1. A combined virtual impactor and field-effect transistor microsystem for particulate matter separation and detection [J] . Yanna Li, Muqing Fu, Wei Pang, 纳米技术与精密工程（英文） . 2021,第001期
• 2. Impedimetric or Ion-Sensitive Field-Effect Transistor (ISFET) Aptasensors Based on the Self-Assembly of An Nanoparticle-Functionalized Supramolecular Aptamer Nanostructures [J] . Sharon E, Freeman R, Tel-Vered R, Electroanalysis . 2009,第11期
• 3. Impedimetric or Ion-Sensitive Field-Effect Transistor (ISFET) Aptasensors Based on the Self-Assembly of An Nanoparticle-Functionalized Supramolecular Aptamer Nanostructures [J] . Sharon E, Freeman R, Tel-Vered R, Electroanalysis . 2009,第11期
• 4. Fabrication and characterisation of Al gate n-metal–oxide–semiconductor field-effect transistor, on-chip fabricated with silicon nitride ion-sensitive field-effect transistor [J] . Rekha Chaudhary, Amit Sharma, Soumendu Sinha, Computers & Digital Techniques, IET . 2016,第5期
• 5. Effect of mobile ionic-charge on CMOS based ion-sensitive field-effect transistors (ISFETs) [C] . Prodromakis, T., Georgiou, P., Michelakis, K., IEEE International Symposium on Circuits and Systems;ISCAS 2009 . 2009
• 6. Ion-Sensitive Field Effect Transistor (ISFET) for MEMS Multisensory Chips at RIT. [D] . Baylav, Murat. 2010
• 7. Non-Invasive Screening for Alzheimer’s Disease by Sensing Salivary Sugar Using Drosophila Cells Expressing Gustatory Receptor (Gr5a) Immobilized on an Extended Gate Ion-Sensitive Field-Effect Transistor (EG-ISFET) Biosensor [O] . Hui-Chong Lau, In-Kyu Lee, Pan-Woo Ko, -1
• 8. Non-invasive screening for Alzheimer's disease by sensing salivary sugar using Drosophila cells expressing gustatory receptor (Gr5a) immobilized on an extended gate ion-sensitive field-effect transistor (EG-ISFET) biosensor. [O] . Hui-Chong Lau, In-Kyu Lee, Pan-Woo Ko, 2015

• 1. Amino Acid Sensing Using an Ion-Sensitive Field-Effect Transistor [J] . Akimitsu Kugimiya ,Kaori Kohara . 化学与化工 . 2012,第005期
• 2. Fabrication of pentacene organic field-effect transistors with polyimide gate dielectric layer [J] . DONG Mao-jun ,TAO Chun-lan ,ZHANG Xu-hui . 光电子快报：英文版 . 2007,第6期
• 3. Fabrication of the Sodium Ions Extended Gate Field Effect Transistor by Using the Entrapment Method [J] . Jung-Chuan Chou . 稀有金属材料与工程 . 2006,第A03期
• 4. A combined virtual impactor and field-effect transistor microsystem for particulate matter separation and detection [J] . Yanna Li ,Muqing Fu ,Wei Pang . 纳米技术与精密工程 . 2021,第001期
• 5. 具有纳米结构的嵌段共聚物湿敏材料的制备及敏感特性研究 [C] . LI Yang ,李扬 ,ZHAO Huijie . 第十六届中国湿度与水分学术交流会 . 2016
• 6. 基于具有纳米结构二氧化钛敏感膜的QCM气敏传感器研究 [A] . 张翱 . 2010