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首页> 外文学位 >Toward nanowire devices and systems: Heterostructure design and dielectrophoretic integration.
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Toward nanowire devices and systems: Heterostructure design and dielectrophoretic integration.

机译：迈向纳米线器件和系统：异质结构设计和介电泳集成。

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摘要

Successes in the growth and fabrication of semiconductor nanowires, have led to new opportunities in device design for a wide variety of applications. Nanowires provide unique opportunities in device engineering in that their properties can be manipulated and tailored at the time of their creation to meet specific functional applications. Such nanowire devices can then be harvested to serve as building blocks for larger integrated systems. This is typically referred to as the "bottom-up" approach and adds a degree of flexibility not available in planner device fabrication. In this dissertation we will exam on a few specific aspects of semiconductor device and system engineering. Specifically we examine the geometric limits for coherence in radial nanowire heterostructures as well as the use of electric fields to align and place nanowires.;Novel nanowire device designs often require, or can benefit from, the use of heterostructures in their design. In determining the feasibility of these designs it is necessary to consider the strain that arises in heterostructures due to the lattice mismatch between materials. Such strain not only affects the electronic and optical properties of the device, but also determines the device dimensions at which coherence is lost and dislocations form, which will significantly alter or degrade device performance. In the second chapter of this dissertation we present a methodology to predict critical dimensions for coherently strained coaxial nanowire heterostructures based on a well-known formalism used to determine the critical thickness in planar epitaxial growth. It is anticipated that this model will serve as a guide to determine the feasibility of specific coherently strained nanowire heterostructure device designs.;While many individual nanowire devices and structures have been demonstrated, there are very few examples of large (or moderately sized) nanowire systems. Manipulating and placing nanowires in a useful fashion continues to be a considerable challenge. In the final chapter of this dissertation nanowire placement using Dielectrophoresis (DEP) is explored. DEP refers to the use of electric fields to manipulate neutrally charged particles in solution and can be used to attract nanowires (suspended in solution) onto predefined electrodes. DEP offers the ability to assemble a wide variety of nanowires and is not limited by the way in which a nanowire is fabricated. Experimental results are presented and discussed demonstrating the feasibility of DEP as means to construct nanowire systems.
机译：半导体纳米线的生长和制造方面的成功为各种应用带来了器件设计方面的新机遇。纳米线为设备工程提供了独特的机会，因为可以在创建纳米线时对其属性进行调整和定制，以满足特定的功能应用。然后可以收获这种纳米线器件，以用作大型集成系统的构建块。这通常称为“自下而上”的方法，并增加了规划器设备制造中不可用的灵活性。在本文中，我们将研究半导体器件和系统工程的一些特定方面。具体来说，我们研究了径向纳米线异质结构中相干性的几何极限，以及使用电场来对准和放置纳米线。新颖的纳米线器件设计通常需要在异质结构中使用或从中受益。在确定这些设计的可行性时，必须考虑由于材料之间的晶格失配而在异质结构中产生的应变。这样的应变不仅影响器件的电子和光学特性，而且还决定了器件尺寸的大小，在该尺寸上会失去相干性并形成位错，这将大大改变或降低器件性能。在本论文的第二章中，我们介绍了一种基于众所周知的形式主义来预测相干应变同轴纳米线异质结构的临界尺寸的方法，该形式用于确定平面外延生长的临界厚度。预计该模型将为确定特定相干应变纳米线异质结构器件设计的可行性提供指导。尽管已证明了许多单独的纳米线器件和结构，但很少有大型（或中等尺寸）纳米线系统的示例。 。以有用的方式操纵和放置纳米线仍然是相当大的挑战。在本论文的最后一章中，探讨了使用介电电泳（DEP）的纳米线放置。 DEP是指使用电场来操纵溶液中的中性带电粒子，并且可以用来将纳米线（悬浮在溶液中）吸引到预定的电极上。 DEP提供了组装各种纳米线的能力，并且不受制造纳米线的方式的限制。提出并讨论了实验结果，证明了DEP作为构建纳米线系统手段的可行性。

著录项

  • 作者

    Raychaudhuri, Sourobh.;

  • 作者单位

    University of California, San Diego.;

  • 授予单位 University of California, San Diego.;
  • 学科 Engineering Electronics and Electrical.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 150 p.
  • 总页数 150
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

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