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首页> 外文学位 >Process and mechanistic studies of the patterning of aluminum and copper thin films for multi-level metallization structures by chemical-mechanical planarization.
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Process and mechanistic studies of the patterning of aluminum and copper thin films for multi-level metallization structures by chemical-mechanical planarization.

机译：通过化学机械平面化对多层金属化结构的铝和铜薄膜进行构图的工艺和机理研究。

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摘要

In this thesis, chemical-mechanical planarization (CMP) of aluminum, copper and silicon dioxide is investigated. Chemical-mechanical planarization is a polishing process that is used in the semiconductor industry to delineate the metal interconnections on a silicon chip and to provide the planarity necessary to build multi-level interconnect schemes with sub-microscopic lines. It uses a combination of mechanical forces from a polishing pad and abrasive slurry mixture, and chemical forces from chemical reagents in the slurry to remove and planarize material. The main goal of this thesis is to examine the effects that changes in the pad and slurry properties have on the polishing of Al, Cu, and SiO2 and from these results, to gain insights into the fundamental mechanisms involved in the removal of these materials.; Presented in this thesis are detailed studies of the chemical-mechanical planarization of Al and Cu thin films with various alumina-based slurry mixtures. Etching and polishing of aluminum showed that the oxidizer (H2O 2) concentration in the slurry has no effect on the Al removal rate. However, further analysis established that the incorporation of H2O 2 in the slurry is critical when polishing patterned aluminum samples to remove the TiN adhesion/diffusion barrier liner.; In both etching and CMP of copper, the H2O2 concentration in the slurry has a substantial effect on the copper removal rate. For the etching experiments, a thick cuprous oxide (Cu2O) forms on the surface of the etched metal at high %H2O2 concentration which limits the etching. For copper CMP, the removal rate behavior at high (H2O2) is attributed to a CuO film that forms on the copper. The polishing of copper is described as a combination of two processes, mechanically enhanced oxidation of the metal and dissolution of the oxidation reaction products.; In an effort to improve the performance of existing SiO2 slurries, oxide polishing studies were done with two novel slurries containing a spherically shaped silica abrasive. The results of this study revealed a substantial decrease in the amount of abrasive particles that adhere to oxide surface when polishing with these unique slurries.
机译：本文研究了铝，铜和二氧化硅的化学机械平面化（CMP）。化学机械平面化是一种抛光工艺，在半导体工业中用于描绘硅芯片上的金属互连并提供必要的平面性，以构建具有亚微观线的多层互连方案。它结合了来自抛光垫和研磨浆混合物的机械力，以及来自浆液中化学试剂的化学力，以去除材料并使其平坦化。本论文的主要目的是研究抛光垫和浆料特性的变化对Al，Cu和SiO 2 抛光的影响，并从这些结果中获得对基本机理的认识。涉及清除这些材料。本文提出了对各种氧化铝基浆料混合物对铝和铜薄膜进行化学机械平面化的详细研究。铝的蚀刻和抛光表明，浆料中的氧化剂（H 2 O 2 ）浓度对Al的去除率没有影响。然而，进一步的分析表明，当抛光图案化的铝样品以去除TiN粘附/扩散阻挡衬里时，在浆液中掺入H 2 O 2 至关重要。在铜的蚀刻和CMP中，浆液中H 2 O 2 的浓度对铜的去除率都有重要影响。对于蚀刻实验，在高％H 2 O 2 的蚀刻金属表面形成厚的氧化亚铜（Cu 2 O）限制蚀刻的浓度。对于铜CMP，高（H 2 O 2 ）的去除速率行为归因于在铜上形成的CuO膜。铜的抛光被描述为两种工艺的结合，即机械增强金属的氧化和氧化反应产物的溶解。为了提高现有SiO 2 浆料的性能，使用两种包含球形二氧化硅磨料的新型浆料进行了氧化物抛光研究。这项研究的结果表明，使用这些独特的浆料进行抛光时，附着在氧化物表面的磨料颗粒数量大大减少。

著录项

  • 作者

    Hernandez, Joseph L.;

  • 作者单位

    State University of New York at Albany.;

  • 授予单位 State University of New York at Albany.;
  • 学科 Engineering Materials Science.; Physics General.; Chemistry General.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 111 p.
  • 总页数 111
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;物理学;化学;
  • 关键词

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