• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Stress evolution during isothermal and isochronal annealing of sputtered nickel-titanium thin films on (100)-silicon.
【24h】

Stress evolution during isothermal and isochronal annealing of sputtered nickel-titanium thin films on (100)-silicon.

机译：（100）硅上溅射镍钛薄膜的等温和等时退火过程中的应力演变。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

he goal of this research has been to investigate the intrinsic stress resulting from sputtering, extrinsic thermal stress resulting from the temperature change in NiTi on (100)Si, stress evolution behavior during isochronal and isothermal annealing of as-sputtered films, and the interaction between stress and phase transformations in crystallized films. The latter may eventually lead to application of NiTi films as actuator materials in microelectromechanical systems (MEMS). Near-equiatomic Ni-rich NiTi films were fabricated by planar d.c. magnetron sputtering using Ni-rich NiTi cathodes, and near-equiatomic Ti-rich NiTi films were fabricated using a composite cathode. Thin film stress measurements by the wafer-curvature method showed that compressive intrinsic stresses resulted from the deposition parameters used, and the magnitude of the intrinsic stress depended on the working gas density as well as the film thickness. Both isothermal and isochronal annealing experiments showed that the residual stresses were stable below the deposition temperature. When the annealing temperature exceeded the deposition temperature, stress was relaxed by a two-stage process for crystalline films, and by a one-stage process for amorphous films. For both near-equiatomic Ni-rich NiTi films on Si and near-equiatomic Ti-rich NiTi on
机译：这项研究的目的是研究溅射产生的内在应力，NiTi在（100）Si上的温度变化产生的外在热应力，溅射膜的等时和等温退火过程中的应力演化行为以及两者之间的相互作用。结晶膜中的应力和相变。后者可能最终导致将NiTi薄膜用作微机电系统（MEMS）中的致动器材料。用平面直流电法制备了近等原子的富NiNi薄膜。使用复合镍制作了使用富镍NiTi阴极的磁控溅射，以及近等原子的富钛NiTi膜。通过晶片曲率法测量的薄膜应力表明，压缩固有应力是由所使用的沉积参数引起的，并且固有应力的大小取决于工作气体密度以及膜厚度。等温和等时退火实验均表明，残余应力在沉积温度以下是稳定的。当退火温度超过沉积温度时，对于结晶膜，通过两步法，对于非晶膜，通过一步法，应力被缓和。对于Si上的近等原子的富NiNi薄膜和Si上的近等原子的富Ti NiTi薄膜

著录项

  • 作者

    Zhang, Jinping.;

  • 作者单位

    Michigan State University.;

  • 授予单位 Michigan State University.;
  • 学科 Materials science.;Mechanics.
  • 学位 M.S.
  • 年度 1998
  • 页码 141 p.
  • 总页数 141
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号