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首页> 外文学位 >Surface and interface structure formation in III-V compound semiconductors grown by metal-organic vapor phase epitaxy.
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Surface and interface structure formation in III-V compound semiconductors grown by metal-organic vapor phase epitaxy.

机译：通过金属有机气相外延生长的III-V族化合物半导体的表面和界面结构形成。

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The influence of impurity incorporation on the formation of microscopic growth-front morphology during metal-organic vapor phase epitaxy (MOVPE) was quantitatively evaluated. The impact of different doping chemistry on growth front morphology was initially studied at first, by using different carbon doping precursors. A model was developed in which surface-adsorbed methyl groups can inhibit further adsorption of Ga species and impede the lateral motion of surface atomic steps and thus lead to the change in surface morphology.; Different types of doping materials belonging to group II, IV, and VI in periodic table were used to study the interaction between impurity elements and growth front structure. Systematic trends of the impact of different impurities on surface morphology were observed. Oxygen and magnesium have the largest influence on the surface morphology of the dopants studied. Several factors, including the impurity valence state, the impurity-host atom bond strength and length, surface step structure, and the surface reaction chemistry play important roles in determining the influence of the impurity atoms on the surface morphology. Models incorporating both surface chemistry and structures were developed in order to predict and explain the details of the different types of impurity incorporation processes.; The effect of interface roughness on the resonant tunneling diode (RTD) device performance was quantitatively examined. A methodology of quantitatively evaluating interface roughness in device structures was demonstrated. The quantitative impact of substrate misorientation and growth interruption at the In{dollar}sb{lcub}0.3{rcub}{dollar}Ga{dollar}sb{lcub}0.7{rcub}{dollar}As/Al{dollar}sb{lcub}0.8{rcub}{dollar}Ga{dollar}sb{lcub}0.2{rcub}{dollar}As interface on the formation of the microscopic interfacial structures was determined. A simulation was used to quantitatively correlate the interface roughness to the I-V characteristics and subsequent device performance.
机译：定量评估了杂质掺入对金属有机气相外延（MOVPE）期间微观生长前沿形态形成的影响。首先，通过使用不同的碳掺杂前体，初步研究了不同掺杂化学对生长前沿形态的影响。建立了一个模型，其中表面吸附的甲基可以抑制Ga物种的进一步吸附并阻碍表面原子台阶的横向运动，从而导致表面形态的变化。元素周期表中属于II，IV和VI组的不同类型的掺杂材料用于研究杂质元素与生长前沿结构之间的相互作用。观察到不同杂质对表面形态的影响的系统趋势。氧和镁对所研究掺杂剂的表面形态影响最大。决定杂质原子对表面形态的影响的重要因素包括杂质价态，杂质与主体原子的键合强度和长度，表面台阶结构以及表面反应化学等。开发了结合表面化学和结构的模型，以预测和解释不同类型杂质结合过程的细节。定量检查了界面粗糙度对共振隧穿二极管（RTD）器件性能的影响。演示了定量评估器件结构中界面粗糙度的方法。 In {dollar} sb {lcub} 0.3 {rcub} {dollar} Ga {dollar} sb {lcub} 0.7 {rcub} {dollar} As / Al {dollar} sb {lcub处底物取向错误和生长中断的定量影响} 0.8 {rcub} {dollar} Ga {dollar} sb {lcub} 0.2 {rcub} {dollar}确定了形成微观界面结构的界面。使用模拟将界面粗糙度与I-V特性和随后的器件性能进行定量关联。

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