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首页> 外文学位 >MICROSTRUCTURE DEVELOPMENT AND ELECTRICAL PROPERTIES OF RUTHENIUM DIOXIDE - GLASS THICK FILM RESISTORS - A NONISOTHERMAL STUDY (HYBRID CIRCUITS, ELECTROCERAMICS, MICROELECTRONICS).
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MICROSTRUCTURE DEVELOPMENT AND ELECTRICAL PROPERTIES OF RUTHENIUM DIOXIDE - GLASS THICK FILM RESISTORS - A NONISOTHERMAL STUDY (HYBRID CIRCUITS, ELECTROCERAMICS, MICROELECTRONICS).

机译：二氧化钌的微结构发展和电学性质-玻璃厚膜电阻器-非等温研究（混合电路，电陶瓷，微电子学）。

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摘要

A nonisothermal constant heating rate study of the microstructure development in RuO(,2)-lead borosilicate glass-alumina substrate thick film resistor system was performed. Formalisms for describing the kinetics of the various microstructure development processes under constant heating rate processing conditions were developed. The effect of glass-substrate interaction was accounted for, throughout the entire resistor processing cycle.; The glass sintering stages were evaluated by correlating the quantitative microscopy data with the theoretical predictions. At low volume fractions of the conductive, glass particles sinter together forming clusters or islands. The glass island size distribution observations were utilized to evaluate the glass sintering kinetics.; The rearrangement of the conductive due to the phenomenon of Brownian motion during liquid phase sintering was addressed. The Brownian motion collision time and the liquid phase sintering kinetics of the conductive were evaluated as functions of materials properties and processing conditions such as the conductive particle size and volume fraction, the constant heating and cooling rate, the peak firing temperature, and hold time at the peak temperature.; The formation of the chain-like, highly connected, skeletal microstructure of the thick film resistors was explained on the basis of the kinetics of conductive rearrangement process and the liquid phase sintering of the conductive.; The RuO(,2) ring size distributions were studied and the effect of the RuO(,2) particle size and volume fraction and the glass island formation on these distributions is discussed. The effect of high volume fraction of the conductive on the thickness of the conductive rings and hence on the continuous change in the resistivity (blending curve) is discussed.; Based on above observations and analyses, a new modified percolation model for the blending curve is proposed. This model is based on only two parameters and can explain the observed changes in room temperature resistivity with: (a) processing for constant resistor ink chemistry and (b) resistor ink chemistry for constant processing.; The analyses presented in this work bring out the complexities involved in the thick film resistor system and shed light on the factors that need to be considered during resistor modeling. Such analyses show promise of converting the thick film technology from an 'art' to a 'science'.
机译：对RuO（，2）-铅硼硅酸盐玻璃-氧化铝衬底厚膜电阻器系统中的微结构发展进行了非等温恒定升温速率研究。开发了用于描述在恒定加热速率处理条件下各种微结构发展过程动力学的形式主义。在整个电阻器处理周期中，都考虑了玻璃与基板相互作用的影响。通过将定量显微镜数据与理论预测值进行关联来评估玻璃烧结阶段。在导电的低体积分数下，玻璃颗粒烧结在一起形成簇或岛。利用玻璃岛尺寸分布观察来评估玻璃烧结动力学。解决了由于液相烧结过程中布朗运动现象引起的导电材料的重新排列。根据材料性能和加工条件（如导电颗粒的尺寸和体积分数，恒定的加热和冷却速率，峰值烧制温度以及在45℃下的保持时间）对导电剂的布朗运动碰撞时间和液相烧结动力学进行了评估。峰值温度。基于导电重排过程的动力学和导电剂的液相烧结，解释了厚膜电阻器的链状，高度连接的骨架微观结构的形成。研究了RuO（，2）环的尺寸分布，并讨论了RuO（，2）粒径和体积分数以及玻璃岛形成对这些分布的影响。讨论了高体积分数的导体对导电环厚度的影响，并因此对电阻率的连续变化（混合曲线）的影响。基于以上观察和分析，提出了一种新的混合曲线修正渗流模型。该模型仅基于两个参数，并且可以通过以下方式解释观察到的室温电阻率变化：（a）用于恒定电阻器油墨化学的处理，以及（b）用于恒定处理器的电阻油墨的化学处理；这项工作中提出的分析揭示了厚膜电阻器系统所涉及的复杂性，并阐明了电阻器建模期间需要考虑的因素。这些分析表明，有望将厚膜技术从“艺术”转变为“科学”。

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  • 作者

    CHITALE, SANJAY MADHAV.;

  • 作者单位

    Purdue University.;

  • 授予单位 Purdue University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 1986
  • 页码 257 p.
  • 总页数 257
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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