Electrical and microstructure evolution of thick film lead-free resistors after various temperature treatments

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• 来源
  《International Seminar on Electronics Technology》|2009年||共5页
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• 中图分类 TN405-53;
• 关键词

  X-ray diffraction; crystal microstructure; crystal structure; electrical resistivity; firing (materials); lattice constants; thick film resistors; thick films; Allt; subgt; 2lt; /subgt; Olt; subgt; 3lt; /subgt; -AgPd; R-100 k paste; R-100 paste; RuOlt; subgt; 2lt; /subgt; X-ray diffractograms; alumina substrate; conductive phase; electrical property; firing; leadfree thick film resistor; microstructure evolution; resistance thermal coefficient; screen printing; sheet resistivity; temperature 750 degC to 950 degC; time 10 min; time 6 hour;

  机译：X射线衍射;晶体结构;电阻率;电阻率;烧制（材料）;晶格常数;厚膜电阻;厚膜;Al＆lt;＆gt;o＆lt;/ sub＆gt;-axd;R-100 k粘贴;R-100粘贴;ruo＆lt;sub＆gt;2＆lt;/ sub＆gt;X射线衍射图;氧化铝基板;导电阶段;电性能;烧制;引线;引线厚膜电阻;微观结构演变;电阻热系数;屏幕 印刷;薄层电阻率;温度750 degc至950 degc;时间10分钟;时间6小时;