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MEMS varactors for RF applications: Analysis and design.

机译：用于射频应用的MEMS变容二极管：分析和设计。

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摘要

Particular research effort has been directed to Micro- Electro-Mechanical System (MEMS) varactors because of their desirable characteristics including high tuning ranges, high quality factors, and virtually nonexistent current losses.;Although numerous MEMS varactors have been manufactured fruitfully in many processes, the modeling and characterization of these varactors were primitive and several design aspects were ignored. As such, this dissertation dedicated its attention to the analysis and design of MEMS varactors.;The analytical part of the dissertation studied the effects of etching holes and residual stress on the ideal capacitance calculation method in MEMS parallel plate varactors. It was found that the etching holes do not significantly affect the capacitance or the tuning range of MEMS varactors, regardless of their presence in one or two plates, perforation configuration, number, shape, or size. On the other hand, the initial warping of a suspended plate caused by residual stress was found to cause a discrepancy between theoretical and measured capacitance results ranging from 15% to 80%. Hence, holding the residual stress responsible for this discrepancy, haphazardly, irrespective of suspension configuration, as mostly exercised in the literature, is unjustified. The latter statement is especially true remembering that some reported measured results are thrice as much their theoretical counterparts.;Following the analytical study, the developmental part proposed two novel MEMS variable capacitance device (VCD) structures capable of providing a predetermined, customizable, tuning range. Further, a MEMS varactor based on the zipping motion was presented. Both the VCD and zipping varactor utilized the silicon substrate to emulate the role of the bottom plate. Theoretical analysis and simulations were carried out and verified with measurements. The VCD structures provided theoretical tuning ranges from 4.9 to 35 and from 3.4 to 26 respectively. The first VCD obtained, selectively, distinct tuning ranges of 3, 3.4, and 4.4 at 1 GHz, while the other had mediocre performance. Measurements of a first version of the zipping varactor provided a tuning range, quality factor, and actuation voltage of 4.5, 16.4, and 55 V respectively, while another version had a tuning range, quality factor, and actuation voltage of 4.2, 17, and 55 V respectively.
机译：由于微机电系统（MEMS）变容二极管具有令人满意的特性，包括高调谐范围，高品质因数以及几乎不存在电流损耗，因此已经进行了特殊的研究工作。尽管许多MEMS变容二极管在许多过程中都取得了丰硕的成果，这些变容二极管的建模和表征是原始的，忽略了几个设计方面。论文的分析部分研究了刻蚀孔洞和残余应力对MEMS平行板变容二极管理想电容计算方法的影响。已经发现，蚀刻孔不会显着影响MEMS变容二极管的电容或调谐范围，无论它们存在于一块或两块板中，穿孔结构，数量，形状或尺寸如何。另一方面，发现由残余应力引起的悬浮板的初始翘曲导致理论电容值和测量电容值之间的差异在15％至80％之间。因此，随意地使残余应力造成这种差异是不合理的，而不论悬挂结构如何，这在文献中大多都是如此。记住某些报告的测量结果是其理论值的三倍，后一种说法尤其正确。在分析研究之后，开发部分提出了两种新颖的MEMS可变电容器件（VCD）结构，它们能够提供预定的，可定制的调整范围。 。此外，提出了基于拉链运动的MEMS变容二极管。 VCD和拉链变容二极管均利用硅衬底来模仿底板的作用。进行了理论分析和模拟，并通过测量进行了验证。 VCD结构提供的理论调谐范围分别为4.9到35和3.4到26。第一个VCD在1 GHz处有选择地获得了3、3.4和4.4的不同调谐范围，而另一个则性能中等。第一个版本的拉链变容二极管的测量值分别提供了4.5、16.4和55 V的调谐范围，品质因数和激励电压，而另一个版本的调谐范围，品质因数和激励电压分别为4.2、17和分别为55V。

著录项

  • 作者

    Elshurafa, Amro M.;

  • 作者单位

    Dalhousie University (Canada).;

  • 授予单位 Dalhousie University (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 132 p.
  • 总页数 132
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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