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Anomalous current and voltage fluctuations in high power impulse magnetron sputtering.

机译：大功率脉冲磁控溅射中的异常电流和电压波动。

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摘要

The objective of this work was to study dc and High Power Impulse Magnetron Sputtering (HiPIMS) plasmas in order to better understand the various aspects of sputtering; such as rate, uniformity and current and voltage characteristics. The results compare known characteristics for general plasmas as applied to dc and HiPIMS plasmas. Methods are put forth to better describe these plasmas. These include dielectric constant analysis, circuit equivalent models, fluid based models and other computational models to predict current and voltage vs. time curves for HIPIMS.;Models describing the plasma behavior are important due to the nature of HiPIMS plasmas. HiPIMS systems generate very high intensity discharges resulting in a higher degree of ionization of the sputtered flux. Consideration of ionized flux from a HiPIMS process is fundamental to understanding the scattering behavior within the plasma and electric fields within the plasma. Various models are explored for their contributions to provide a better overall understanding of the magnetron process. These models include capacitor and inductor networks, and mathematical approximations to specific behaviors such as an ion matrix sheath. This dissertation focuses on developing methods to predict the characteristic current-voltage behavior for HIPIMS. Analysis of the fluctuations providing a clearer picture of the plasma behavior has been developed. This understanding provides a groundwork for a number of expectations and improvements to the HiPIMS and related processes. This dissertation links, plasma immersion ion implantation ion matrix sheath theory (PIII), and ion sheath transit times to the fluctuations.
机译：这项工作的目的是研究直流和大功率脉冲磁控溅射（HiPIMS）等离子体，以便更好地了解溅射的各个方面。例如速率，均匀性以及电流和电压特性。结果比较了应用于DC和HiPIMS等离子体的普通等离子体的已知特性。提出了更好地描述这些等离子体的方法。其中包括介电常数分析，电路等效模型，基于流体的模型以及其他可预测HIPIMS电流和电压与时间关系曲线的计算模型。由于HiPIMS等离子体的性质，描述等离子体行为的模型非常重要。 HiPIMS系统产生非常高的强度放电，从而导致溅射通量的电离程度更高。考虑来自HiPIMS工艺的电离通量对于理解等离子体内的散射行为和等离子体内的电场至关重要。探索了各种模型对它们的贡献，以提供对磁控管过程的更好的整体理解。这些模型包括电容器和电感器网络，以及对特定行为（如离子矩阵护套）的数学近似。本文重点研究了预测HIPIMS特征电流-电压行为的方法。已经开发了对波动的分析，以提供对等离子体行为的更清晰的了解。这种理解为HiPIMS和相关流程的许多期望和改进提供了基础。本论文将等离子体浸没离子注入离子基体鞘层理论（PIII）与离子鞘层的跃迁时间联系起来。

著录项

  • 作者

    Kirkpatrick, Scott.;

  • 作者单位

    The University of Nebraska - Lincoln.;

  • 授予单位 The University of Nebraska - Lincoln.;
  • 学科 Physics Fluid and Plasma.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 316 p.
  • 总页数 316
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 等离子体物理学;工程材料学;
  • 关键词

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