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Investigation of reliability in gallium nitride high electron mobility transistors using equivalent circuit models for use in high power, high frequency microwave amplifiers

机译：使用等效电路模型在高功率，高频微波放大器中使用等效电路模型对氮化镓高电子迁移率晶体管的可靠性研究

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作者
Huebschman, Benjamin David.;
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作者单位

University of Maryland College Park.;

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授予单位 University of Maryland College Park.;
学科
学位 Ph.D.
年度 2010
页码 197 p.
总页数 197
原文格式 PDF
正文语种 eng
中图分类 AAI3443460;
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2. Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier [J] . Raut Samriddhi, Sehra Khushwant, Mishra Meena, Semiconductor science and technology . 2021,第4期

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3. From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit [J] . Osmanoglu Sinan, Ozbay Ekmel International journal of numerical modelling . 2021,第5期

机译：从模型到低噪声放大器单片微波集成电路：0.03-2.6 GHz塑料四扁平无铅包装镓 - 氮化物低噪声放大器单片微波集成电路
4. Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors [C] . Rahul Yadav, Stefan Regensburger, Andreas Penirschke, International Workshop on Mobile Terahertz Systems . 2021

机译：GaAs高电子移动场效应晶体管太赫兹探测器的微波中频等效电路
5. Gallium Nitride High Electron Mobility Transistors in Chip Scale Packaging: Evaluation of Performance in Radio Frequency Power Amplifiers and Thermomechanical Reliability Characterization [D] . Shover, Michael Andrew. 2017

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6. Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications [O] . Y. C. Lin, S. H. Chen, P. H. Lee, 2020

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7. Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications [O] . Takeshi MIZOGUCHI, Toshiyuki NAKA, Yuta TANIMOTO, 2017

机译：高功率应用氮化镓基高电子迁移晶体管的野外板效应建模

Investigation of reliability in gallium nitride high electron mobility transistors using equivalent circuit models for use in high power, high frequency microwave amplifiers

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