Mo/Cu source/drain ( S/D ) electrodes for amorphous InGaZnO thin film transistors ( a-IGZO TFTs) were investigated. The experimental data indicate that the single-layer Mo electrodes have good adhesion to gate insulators, smaller surface roughness, and higher resistivity, whereas the single-layer Cu electrodes possess bad adhesion to gate insulators as well as the serious Cu atom dif-fusion problems, larger surface roughness, and lower resistivity. To complement each other's advan-tages, the double-layer Mo/Cu electrodes as well as the corresponding a-IGZO TFTs are designed and fabricated, which exhibits good performance parameters(field effect mobility of 8. 33 cm2 ·V-1 · s-1, threshold voltage of 6. 0 V, subthreshold swing of 2. 0 V/dec, and on-off current ratio of 1. 3 × 107 ) . This proved the feasibility and practicability of the double-layer Mo/Cu source/drain elec-trodes for the mass productions of a-IGZO TFTs.%针对非晶铟镓锌氧薄膜晶体管(a-IGZO TFT)的钼/铜源漏电极开展研究.实验证明,单层Mo源漏电极与栅绝缘层之间的粘附性好、表面粗糙度较小、电阻率较大,而单层Cu源漏电极与栅绝缘层之间的结合性差且Cu原子扩散问题严重、表面粗糙度较大、电阻率较小.为了实现优势互补,我们设计了双层Mo(20 nm)/Cu(80 nm)源漏电极,并采用优化工艺制备了包含该电极结构的a-IGZO TFT.器件具有良好的电学特性,场效应迁移率为8.33 cm2·V-1·s-1,阈值电压为6.0 V,亚阈值摆幅为2.0 V/dec,开关比为1.3×107,证明了双层Mo/Cu源漏电极的可行性和实用性.
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