A new method based on Geant4 and Technology Computer Aided Design （TCAD） is de- scribed to assess Single Event Upsets （SEU） sensitivity of SRAMs （Static RAM） in the design phase. SRAM＇s response to radiation and Heavy ion induced upsets was obtained by TCAD simulation instead of ground simulation experiments. Heavy-ion simulation data are fitted by Weibull Function. Then, the energy deposition of secondary particles produced by proton-silicon nuclear reaction was calculated using Geant4 which is based on Monte Carlo method. Finally, the proton-induced upsets can be achieved by combining with Weibull Function. Using this method, the heavy ion and proton- induced SEU rates in TSMC 0.18 μm SRAM were calculated, and the results are basically consistent with ground simulation experiments.%基于Geant4和TCAD（Technology—Computer Aided—Design）建立了一套评估静态存储器（SRAM）单粒子效应的方法．该方法利用TCAD软件模拟半导体存储单元对粒子能量沉积的响应，获得SRAM的重离子单粒子翻转截面，并应用蒙特卡罗工具包Geant4计算质子与硅材料的核反应以及次级粒子在灵敏体积内的能量沉积，进而获得质子的单粒子翻转率．利用该方法，计算了TSMC0．18pm未加固SRAM的重离子和质子翻转率，通过与同工艺SRAM的重离子实验结果进行比较，初步验证了该方法的有效性
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