P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn_3N_2 films.The prepared films are characterized by x-ray diffraction,non-Rutherford backscattering(non-RBS) spectroscopy,xray photoelectron spectroscopy,and photoluminescence spectrum.The results show that the Zn_3N_2 films start to transform to ZnO at 400°C and the total nitrogen content decreases with the increasing annealing temperature.The p-type films are achieved at 500℃ with a low resistivity of 6.33Ω·cm and a high hole concentration of+8.82 × 10^(17) cm^(-3),as well as a low level of carbon contamination,indicating that the substitutional nitrogen(N_O) is an effective acceptor in the ZnO:N film.The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy(V_O) defects in the ZnO:N films.The p-type doping mechanism is briefly discussed.
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机译：Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
