首页> 中文期刊> 《中国物理快报:英文版》 >Low-Temperature Baking Effect of the Radio-Frequency Nb_(3)Sn Thin Film Superconducting Cavity

Low-Temperature Baking Effect of the Radio-Frequency Nb_(3)Sn Thin Film Superconducting Cavity

         

摘要

The Nb_(3)Sn thin film cavity,having the potential to be operated at a higher temperature and higher gradient compared to the cavity made from bulk niobium,is one of the most promising key technologies for the nextgeneration radio-frequency superconducting accelerators.In our work,several 1.3 GHz single-cell TESLA-shaped Nb_(3)Sn thin film cavities,coated by the vapor diffusion method,were tested at Peking University and Institute of Modern Physics,Chinese Academy of Sciences.It was observed that the performance of the Nb_(3)Sn thin film cavities in the tests without the slow cooling down procedure and the effective magnetic field shielding was significantly improved by using a low temperature baking at 100℃for 48 hours.Although the peak electric field of the cavity remained unchanged,the rapid drop of the unloaded Q value(Q0)with the increasing accelerating field(Q-slope)was effectively eliminated,resulting in an improvement of the Q0 in the intermediate field region by~8 times.Furthermore,under better test conditions with the shielded magnetic field less than 5 mG and the slow cooling down procedure in the temperature range of 25-15 K,the Q0 was still improved by about 20%.Our study shows that the low temperature baking can be an effective supplement to the effective post-treatment for the Nb_(3)Sn thin film cavity.

著录项

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号