Scanning tunneling microscopy was used to measure the mean lateral dimensions D of grains at the surface of Ni films with thicknesses ranging from 15 to 200nm.The same films were analyzed by x-ray diffraction to obtain the average linear dimensionsδof coherent scattering regions in the direction normal to the film plane(coherence depths).For thin Ni films condensed on single sapphire substrate at room temperature,these two lengths D andδare equal and increase with film thickness.But for films thicker than 130nm,these two lengths have different constant values and D>δ.This is because the coherent scattering depth is not only limited by the grain sizes but also by various defects in the grains.The difference between the constant values of D andδdisappears for films after annealing for 30min at 423K in the ultra-high vacuum system.
展开▼
机译：Low-temperature scanning tunneling microscopy and near-edge X-ray absorption fine structure investigation of epitaxial growth of F16CuPc thin films on graphite
机译：Growth and structure of thin platinum films deposited on Co(0001) studied by low-energy electron diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and scanning tunneling microscopy
机译：利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
