Employing Ni-Cr co-doping to prepare low phase transition temperature VO_2film

机译：采用Ni-Cr共掺杂，制备低相转变温度VO_2FILM

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Anew doping approachofpreparing VO_2 film was proposedtosignificantly tune the transition phase temperature.Theheavy Ni-Cr-codoped VO_2 film ultra-thin layer was deposited on the pure VO_2 filmbyreactive pulsed magnetronsputtering on the Si substrate followed with annealing. The microstructure, optical and phase transition performance ofVO2 films were characterized via X-ray diffraction, UV/VIS/NIR spectrophotometer and thin film phase transitionmeasurement system, respectively. The result indicates that the transition phase temperature of VO_2 film can be reducedfrom 53 °C to 30 °Cby easily controlling different doping time.

机译：重组掺杂方法采用促进vo_2薄膜的促进曲调转变相温度。重型Ni-Cr编号的VO_2薄膜超薄层沉积在纯VO_2薄膜可反应脉冲磁控管上在Si衬底上溅射，然后退火。微观结构，光学和相变性能VO2薄膜通过X射线衍射，UV / VI / NIR分光光度计和薄膜相位过渡表征分别测量系统。结果表明，可以减少VO_2膜的过渡期温度从53°C到30°CBy易于控制不同的掺杂时间。

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《International Conference on Thin Film Physics and Applications》|2019年|1 CD-ROM|共8页
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QicongHe; Dongping Zhang; Ying Huang; Yu Yang; Huan Guan; JingchengJin; Ping Fan;
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Employing Ni-Cr co-doping to prepare low phase transition temperature VO_2film

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