Diamond film have been synthesized by dc plasma chemical vapour deposition(CVD)from a gaseous mixture of acetone and hydrogen gases with a growth rate of 220μm/h.The films obtained have good crystallinity that are chaxacte-ized by Raman spectrometry,scanning electron microscopy and x-ray diffraction.X-ray photoelectron spectroscopy analysis have confirmed that diamond nucleation and growth are on SiC rather than on clean Si.The mechanism of high rate growth diamond film have been discussed too.
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