The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles.The temperature,dielectric permittivity,voltage bias,frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model.The results are in agreement with the recent experiments.
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机译：Publisher’s Note: “On the origin of polarization fatigue and Curie–von Schweidler relaxation current in Pb(Zrx,Ti1−x)O3 ferroelectric thin films: A unique mechanism based on charge trapping by interface defects” J. Appl. Phys. 133, 014101 (2023)
机译：On the origin of polarization fatigue and Curie-von Schweidler relaxation current in Pb(Zr-x,Ti1-x)O-3 ferroelectric thin films: A unique mechanism based on charge trapping by interface defects
