半导体工艺中的光刻是芯片制造中最关键的工艺.DFB半导体激光器的腔体结构与普通半导体激光器的腔体结构不同, 需要制作周期光栅, 光栅周期为亚微米数量级;鉴于亚微米光栅曝光系统在半导体激光器的应用需求, 瑞士一家公司研制了一款专用于亚微米周期光栅的设备Phabler 100M DUV光刻机;本系统采用了非线性晶体的倍频效应和周期性光栅的泰伯效应.这些关键技术用较低的成本实现了极高的分辨率, 可以制作周期性光栅并达到100 nm的线条分辨率;掩模版和晶片的不平行将造成光刻线条的不均匀, 应用CCD探测器和计算机相结合的办法是做平行度的关键调试.%The lithography in semiconductor process is the most critical process in chip manufacturing.The cavity structure of DFB semiconductor laser is different from that of ordinary semiconductor laser, so it is necessary to make a periodic grating period of sub-micron order of magnitude. In view of the submicron grating exposure system in semiconductor laser applications demand, a Swiss company has developed a device, the Phabler 100 M DUV Lithography machine, which is dedicated to the submicron periodic grating. The system uses frequency multiplier effect of nonlinear crystals and the Talbot effect of periodic grating. These key technologies, which achieve extremely high resolution at low cost, can produce periodic gratings and achieve line resolution of 100 nm. The uneven rows of the mask and the wafer will create uneven line on the lithography, the method of combining CCD detector and computer is the key of parallelism adjustment.
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