氮化铝(AlN)是一种宽禁带深紫外半导体材料,其良好的性能可作为紫外固态光源.采用射频磁控溅射法,在p型Si(100)衬底上制备了AlN薄膜.通过X射线衍射分析(XRD)、紫外-可见光光谱(UV-Vis)、场发射测试对制备的AlN薄膜进行了测试分析,针对薄膜生长特性对光吸收的影响及其场发射性能进行了研究.结果显示:在Si衬底上成功的制备了高度(002)取向的AlN薄膜,薄膜在230~250nm间有强紫外吸收,阈值电场为6.39V/μm.场发射测试结果表明,磁控溅射法制备的AlN薄膜具备良好的场发射性.%AlN is a wide band gap deep ultraviolet semiconductor material,its good performance can be used as a sol-id-state ultraviolet light source. AlN thin films were deposited on Si (100) substrate by RF magnetron sputtering. The sample was characterized by means of X ray diffraction (XRD), ultraviolet visible spectroscopy (UV-Vis) and field emission test,the effect of growth characteristics on the absorption of light and its field emission properties were inves-tigated. The results show that a high (002) AlN films were successfully deposited on the Si substrate, it has strong absorption at 230~250nm and the threshold electric field is 6.39V/μm. The field emission test results show that the prepared AlN films have good field emission properties.
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