Dielectric Characteristics of Ba0.65Sr0.35TiO3 Thin Films by Sol-Gel Method

刘桂君; 胡文成; 沈怡东

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Dielectric Characteristics of Ba0.65Sr0.35TiO3 Thin Films by Sol-Gel Method

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Ferroelectric Ba0.65Sr0.35TiO3（BST） thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μC/cm2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 °C exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 °C. The dielectric loss tangent of BST thin films at 100 kHz is less than 0.04. As a result,the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.

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《电子科技学刊》 |2007年第1期|47-49+90|共3页
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刘桂君; 胡文成; 沈怡东;
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State Key Laboratory of Electronic Thin Films ＆ Integrated Devices University of Electronic Science and Technology of China;

State Key Laboratory of Electronic Thin Films ＆ Integrated Devices University of Electronic Science and Technology of China;

State K;

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Dielectric Characteristics of Ba0.65Sr0.35TiO3 Thin Films by Sol-Gel Method

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