采用金属有机化学气相淀积（MOCVD）技术制备大面积组分均匀的高晶格失配InP/In0.81Ga0.19As/InP器件结构材料．器件结构为：在直径为2英寸的S掺杂的InP衬底上采用两步生长法生长厚度为2．8μm的In0.81Ga0.19As层，作为红外探测器的吸收层，然后再生长厚度为0．8μm的InP覆盖层．分析器件结构材料的缓冲层的作用，研究所制备的大面积材料组分均匀性问题．为制作红外探测器器件，以及研究红外探测器器件性能，做好基础工作．%The InP/In0.81Ga0.19As/InP structural materical with large area of uniform composition used for infrared detector were grown on (100) S-doped InP substrates by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn, TMGa, ASH3, and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power, their temperatures were detected by a thermocouple, and the reactor pressure was kept at 10000 Pa. The structures of detector included In0.81Ga0.19As absorption layer with the thickness of 2.8 μm and the InP cap layer with the thickness of 0.8 μm. The buffer of InP/In0.81Ga0.19As/InP structures was analyzed. The composition uniformity of InP/In0.81Ga0.19As/InP structures was studied. The result can lay a foundation for the preparation of infrared detectors and the research on their properties properties.
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